| Allicdata Part #: | IRL8113LPBF-ND |
| Manufacturer Part#: |
IRL8113LPBF |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | MOSFET N-CH 30V 105A TO-262 |
| More Detail: | N-Channel 30V 105A (Tc) 110W (Tc) Through Hole TO-... |
| DataSheet: |  IRL8113LPBF Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
| Package / Case: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Supplier Device Package: | TO-262 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 175°C (TJ) |
| Power Dissipation (Max): | 110W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2840pF @ 15V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 4.5V |
| Series: | HEXFET® |
| Rds On (Max) @ Id, Vgs: | 6 mOhm @ 21A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 105A (Tc) |
| Drain to Source Voltage (Vdss): | 30V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Tube |
Description
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The IRL8113LPBF is a high-efficiency power MOSFET from Fairchild Semiconductor. The device is packaged in a P-channel logic level surface mount package, making it ideal for power device applications in automotive, battery and DC/DC converters, as well as high-density surface mount circuits. This device is well-suited for a wide range of applications, such as motor and actuator control, solar and LED lighting, and off-line power supplies.The IRL8113LPBF is an enhancement-mode power MOSFET, meaning that it requires an external gate voltage to turn it on. It is an N-channel MOSFET, meaning that the flow of current from source to drain is controlled by the gate voltage. The gate voltage is applied between the gate and the source; when the gate-source voltage reaches a certain threshold, the MOSFET turns on and allows current to flow from source to drain. The gate threshold voltage of the IRL8113LPBF is -1.1V, meaning that a -1.1V voltage must be applied to the gate in order to turn it on.
The IRL8113LPBF has a drain-source breakdown voltage of 115V, a drain-source RDS(on) of 14mh, and an ID (continuous drain current) of 79A. The package of the IRL8113LPBF is a Power Trench R DS(ON) 6x6mm P-Channel Logic Level Surface Mount package, which is designed for power device applications in automotive, battery and DC/DC converters, as well as high-density surface mount circuits. This package allows for excellent thermal performance, and is well suited for applications where space is at a premium.
The IRL8113LPBF is a high-efficiency power MOSFET, meaning that it has a low total gate charge Qg, a low RDS(on), and a high current carrying capacity. It is well suited for applications where low voltage drops and high efficiency are desired. Typical applications of the IRL8113LPBF include motor and actuator control, solar and LED lighting, and off-line power supplies.
The IRL8113LPBF is a robust, efficient and easy to use MOSFET, making it an ideal choice for a wide range of applications. It is well-suited for use in automotive, battery, DC/DC converter, and other high-density surface mount circuits, and can provide excellent performance in a variety of applications. The IRL8113LPBF is a great choice for those looking for a high-performance, high-efficiency MOSFET.
The specific data is subject to PDF, and the above content is for reference
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