IRL8113STRR Allicdata Electronics
Allicdata Part #:

IRL8113STRR-ND

Manufacturer Part#:

IRL8113STRR

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 105A D2PAK
More Detail: N-Channel 30V 105A (Tc) 110W (Tc) Surface Mount D2...
DataSheet: IRL8113STRR datasheetIRL8113STRR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IRL8113STRR is a modern MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor) from Infineon Technologies. It belongs to the Single package group and is employed primarily in industrial and automotive applications. The device has an integrated drain-source breakdown voltage of 100 V, an on-state resistance of 120 mOhm at 10 V, and a maximum drain current of 15 A. In addition, the device features a gate-source voltage along with integrated electrostatic discharge (ESD) protection.

MOSFETs are a type of transistor that utilize the gate insulator between their source and drain regions to control their conductivity. The physics of the device gives MOSFETs the unique ability to turn on with a very low voltage while achieving extremely high currents. This makes them ideal for high current applications, such as in the power delivery of car batteries and motors.

The IRL8113STRR is composed of a commonly used eight-pin MOSFET package (TO-220), and it presents a highly efficient and reliable device for many applications. Its operating temperature range is -55°C to +150°C, making it suitable for a variety of automotive applications. Along with its ESD protection, the device offers robustness and improved reliability.

The IRL8113STRR is designed for use in a variety of industrial and automotive applications including motor control, power management, and power switching. It can also be used in battery management and current sense applications, as well as inverters, power converters and power supplies. With its high efficiency and low RDS(on) values, the IRL8113STRR can provide the highest power performance in any given application.

The working principle of the IRL8113STRR is based on the MOSFET technology. The device features a p-type MOSFET which acts as an insulated gate FET (IGFET) or metal-oxide semiconductor field-effect transistor (MOSFET). The device utilizes the electric field created by the gate terminal, which is controlled by an applied voltage, to control the flow of current from the source terminal to the drain terminal. When a voltage is applied to the gate terminal, it induces a strong electric field which increases the current flowing between the source and drain terminals and acts as a switch.

The IRL8113STRR is easy to use and highly reliable, making it an ideal device for power management and switching applications. With its integrated ESD protection and high operating temperature, the device is capable of operating in the most extreme conditions without compromising its performance. The device is also capable of providing high current and power performance making it ideal for a wide range of industrial and automotive applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IRL8" Included word is 12
Part Number Manufacturer Price Quantity Description
IRL8113 Infineon Tec... -- 1000 MOSFET N-CH 30V 105A TO-2...
IRL8113STRLPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 105A D2PA...
IRL80HS120 Infineon Tec... -- 1000 MOSFET N-CH 80V 12.5A 6PQ...
IRL8113L Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 105A TO-2...
IRL8113STRL Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 105A D2PA...
IRL8113PBF Infineon Tec... -- 614 MOSFET N-CH 30V 105A TO-2...
IRL8113S Infineon Tec... -- 1000 MOSFET N-CH 30V 105A D2PA...
IRL8113LPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 105A TO-2...
IRL8113SPBF Infineon Tec... -- 1000 MOSFET N-CH 30V 105A D2PA...
IRL8113STRRPBF Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 105A D2PA...
IRL8113STRR Infineon Tec... 0.0 $ 1000 MOSFET N-CH 30V 105A D2PA...
IRL8114PBF Infineon Tec... -- 1000 MOSFET N-CH 30V 90A TO-22...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics