IRL8114PBF Allicdata Electronics
Allicdata Part #:

IRL8114PBF-ND

Manufacturer Part#:

IRL8114PBF

Price: $ 0.93
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 90A TO-220AB
More Detail: N-Channel 30V 90A (Tc) 115W (Tc) Through Hole TO-2...
DataSheet: IRL8114PBF datasheetIRL8114PBF Datasheet/PDF
Quantity: 1000
1 +: $ 0.93000
10 +: $ 0.90210
100 +: $ 0.88350
1000 +: $ 0.86490
10000 +: $ 0.83700
Stock 1000Can Ship Immediately
$ 0.93
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 115W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IRL8114PBF is a P-channel power MOSFETs transistor with low gate charge and high current capabilities. It is specifically designed to minimizing conduction losses and switching losses in power conversion applications.

An IRL8114PBF belongs to single-channel enhancement mode MOSFET, which is also referred to as an insulated-gate field-effect transistor (IGFET). An IRL8114PBF is basically a four-terminal device with two distinct regions, i.e. source and drain, separated by a thin barrier called the gate. The gate is designed to be insulated from the underlying channel to control the flow of electrons. The gate terminal is connected to a voltage source to switch the transistor’s channels on or off.

In most applications, IRL8114PBF is used as an electronic switch in various circuit applications, such as battery charging circuits, reversing polarity circuits and dc/dc converter circuits. In battery charging circuits, it is generally used to switch the voltage from the charging source from one battery bank to another when a discharged battery is detected. In reversing polarity circuits, it is used to switch the polarity of voltage applied to a device between two predetermined levels. In dc/dc converter circuits, it is typically used to switch several dc voltages of different levels in order to maintain a predetermined level of output.

The working principle of an IRL8114PBF basically involves controlling the conduction of electrons through the chip. When the voltage at the gate terminal is raised above the threshold voltage, the transistor’s channel is opened and current starts to flow from the source to the drain. The current flow is controlled by the voltage applied to the gate terminal. When the voltage at the gate is reduced below the threshold voltage, the conduction of the electrons through the channel is stopped and the current flow ceases.

Due to its power handling capability and low gate charge, IRL8114PBF transistors are widely used in various power-handling applications such as motor control, switcher power systems, battery charging and reversing polarity. Furthermore, these transistors are suitable for high-frequency switched-mode power supply applications as well as in high-efficiency low-power audio amplifiers.

The specific data is subject to PDF, and the above content is for reference

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