IRL8113STRLPBF Allicdata Electronics
Allicdata Part #:

IRL8113STRLPBFTR-ND

Manufacturer Part#:

IRL8113STRLPBF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: MOSFET N-CH 30V 105A D2PAK
More Detail: N-Channel 30V 105A (Tc) 110W (Tc) Surface Mount D2...
DataSheet: IRL8113STRLPBF datasheetIRL8113STRLPBF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2840pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Series: HEXFET®
Rds On (Max) @ Id, Vgs: 6 mOhm @ 21A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The IRL8113STRPBF is a single PFET power MOSFET, manufactured by International Rectifier , with a drain-source voltage of 55 V and 375 mOhm of on-state resistance. This device is designed for use in general purpose, power management, and industrial applications.

PFET power MOSFETS are utilized in power management and industrial applications that require very high current handling and low on-state resistance. In addition to this, these devices are robust and have lower gate-to-source voltage requirements than N-type MOSFETS, making them suitable for use with lower-voltage power sources. The IRL8113STRPBF is specifically designed to incorporate both of these features in a single device.

The working principle of the IRL8113STRPBF is relatively simple. When the gate-to-source voltage is low, the PFET is said to be “off”, and no current will be allowed to flow through the source-drain path. When the voltage increases, however, the device will turn “on”, allowing current to flow through the path. This is because of the high conductivity of the channel between the source and drain of the device, which allows for high current to pass through. The on-state resistance of the IRL8113STRPBF is relatively low, meaning that less voltage is required to make the device turn “on”. This allows for improved current handling and power efficiency.

The IRL8113STRPBF are specifically designed for use in applications such as power management, low voltage motors and LED lighting. Due to their high current handling and low gate-to-source voltage requirements, they can be used in virtually any application that requires reliable, efficient operation. The wide range of available gate-to-source voltages also make them suitable for use with a variety of low-voltage power sources.

The IRL8113STRPBF is an excellent choice for applications that require high current and low voltage operation. Their low on-state resistance and wide range of gate-to-source voltages make them an ideal choice for many applications, and their robust construction ensures that they can handle high currents reliably and efficiently.

The specific data is subject to PDF, and the above content is for reference

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