IS41C16100C-50TLI-TR

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Volatile
Memory Format:	DRAM
Technology:	DRAM - EDO
Memory Size:	16Mb (1M x 16)
Write Cycle Time - Word, Page:	--
Access Time:	25ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 85°C (TA)
Mounting Type:	Surface Mount
Package / Case:	54-TSOP (0.400", 10.16mm Width)
Supplier Device Package:	54-TSOP II

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory - IS41C16100C-50TLI-TR Application Field and Working Principle

The IS41C16100C-50TLI-TR is a type of memory device commonly used in computers. It is designed to store data and can be used in applications such as storing images, audio, and other data.The IS41C16100C-50TLI-TR is a type of DRAM, which stands for dynamic random access memory. DRAM is an integrated circuit (IC) that holds information in an array of rows and columns. It has a refresh circuit that is used to refresh data throughout the memory. The device uses a capacitor and transistor to store a single bit of information. This type of memory is volatile, meaning that it will lose its contents when the power is removed.The IS41C16100C-50TLI-TR is a 64Mx8 (or 512Mb) multi-layer chip from Integrated Silicon Solution Inc. It is a 5-volt CMOS component used for fast page mode DRAM accessing. It offers high-speed burst transfer speeds of up to 100 MHz. The device also operates with low power consumption (1W typ). The component features an optional on-chip error correction code (ECC) for greater reliability.The major application fields for the IS41C16100C-50TLI-TR include workstation, server, graphics and multimedia applications. The component is used in applications that require high speed data access in the main memory. It is also used in router, switch and set-top boxes.The working principle of the IS41C16100C-50TLI-TR is based on using a single transistor and a capacitor to form a storage element known as a cell. Each cell stores a single bit of data. Each cell’s capacitor stores the charge that represents the data. The transistor acts as a switch for the capacitor. It controls whether or not the charge remains in the capacitor or is flushed out.To access a location in memory, the device sends an address to the row and column address buffers. The row and column addresses are used to select the specific memory cells. The data is then read from the memory cells and sent to the I/O buffers.To write data to the memory cells, the data is sent to the input/output (I/O) buffer. The row and column addresses are then sent to the row and column address buffers. The data is then written to the memory cells.The primary benefit of using the IS41C16100C-50TLI-TR is its high speed of operation compared to static RAM devices. The device also has low power consumption, making it an ideal choice for applications requiring longer battery life. Furthermore, the optional on-chip error correction code (ECC) ensures greater reliability and data integrity. The IS41C16100C-50TLI-TR is an ideal choice for applications that require faster data access for memory. It is used extensively in workstations, servers, graphics and multimedia applications, routers, switches and set-top boxes. The device’s low power consumption and high speed make it an ideal choice for those looking for higher performance and longer battery life in their applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description