IS41LV16100B-50TL Allicdata Electronics
Allicdata Part #:

IS41LV16100B-50TL-ND

Manufacturer Part#:

IS41LV16100B-50TL

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 44TSOP II
More Detail: DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns...
DataSheet: IS41LV16100B-50TL datasheetIS41LV16100B-50TL Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IS41LV16100B-50TL application field and working principle

As the development of technology in the past few years, the variety of memory devices and their application fields has been ever-increasing, so does the IS41LV16100B-50TL. IS41LV16100B-50TL is access time is 25ns, organized as 2Mbit (128K x 16-bit) high speed static RAM device. This device is specially designed for use in providing efficient and reliable high-performance static Random Access Memory (SRAM) for applications and systems for various embedded systems.

Application field

IS41LV16100B-50TL is mainly used in system buffers, computer printer buffers, disk backup units and many other related applications. It provides extremely fast access times, high-speed cycle and low power consumption in both the active and standby modes which make the device suitable for low-voltage and low-power applications. In addition, the IS41LV16100B-50TL chips can be suitable for embedding in any number of products and applications.

Working principle

IS41LV16100B-50TL uses a static operation principle along with a dynamic design to achieve high-speed data transfer by utilizing a virtual ground cell to improve the VCC rise time. It is the combination of these two principles that makes the IS41LV16100B-50TL an ideal choice for applications which require high speed performance and stability.

The IS41LV16100B-50TL uses the static operation principle along with four active transistors to form a dynamic cell design, meaning that two transistors are used to both drive the cell and receive data. This dynamic cell design allows for a very low access time of 25ns and for the device to achieve high levels of speed and stability by separating the charge from the data and allowing for precharge and recharge of the memory cell within one cycle.

Conclusion

IS41LV16100B-50TL is a highly advanced semiconductor chip that is designed for providing efficient and reliable high-performance static Random Access Memory (SRAM) for applications and systems for various embedded systems. It is the combination of static operation principle along with dynamic design that makes the IS41LV16100B-50TL an ideal choice for applications which require high speed performance and stability. Therefore, IS41LV16100B-50TL can be used in mix signal buffer, system buffers, computer printer buffers, disk backup units and many other related applications with fast access times, high-speed cycle and low power consumption.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IS41" Included word is 40
Part Number Manufacturer Price Quantity Description
IS41C16256C-35TLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 4M PARALLEL 40TSO...
IS41LV16100B-50TL ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16100B-60KLI ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105C-50KLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 42SO...
IS41C16100C-50TLI ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 54TS...
IS41LV16256C-35TLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 4M PARALLEL 40TSO...
IS41LV16105D-50TLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-50KL ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-50TL ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 44TS...
IS41C16256C-35TLI ISSI, Integr... 0.0 $ 1000 IC DRAM 4M PARALLEL 40TSO...
IS41LV16100C-50KLI-TR ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 42SO...
IS41C16100C-50TLI-TR ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 54TS...
IS41LV16105B-60TLI ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16105C-50TLI ISSI, Integr... -- 58 IC DRAM 16M PARALLEL 44TS...
IS41LV16100B-50KLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-50TLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16100C-50KLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16100B-60KLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16100B-60TLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16105B-50KL-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16100C-50TLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16100B-50TLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 44TS...
IS41C16100C-50KLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-60KLI ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-50KLI ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105D-50KLI ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 42SO...
IS41C16257C-35TLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 4M PARALLEL 40TSO...
IS41C16100C-50KLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41C16105C-50KLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-60TL-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16105D-50KLI-TR ISSI, Integr... 3.87 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16100B-50TLI-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16100D-50KLI-TR ISSI, Integr... 4.34 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16100B-60KL ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-50TLI ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 44TS...
IS41C16105C-50TLI ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 54TS...
IS41LV16100D-50KLI ISSI, Integr... 4.78 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41LV16105B-50TL-TR ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 44TS...
IS41LV16105B-60KL ISSI, Integr... 0.0 $ 1000 IC DRAM 16M PARALLEL 42SO...
IS41C16105C-50TLI-TR ISSI, Integr... -- 1000 IC DRAM 16M PARALLEL 54TS...
Latest Products
MT53D512M64D4NZ-053 WT ES...

IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

MT53D512M64D4NZ-053 WT ES:D TR Allicdata Electronics
ECF620AAACN-C1-Y3-ES

LPDDR3 6G DIE 192MX32Memory IC

ECF620AAACN-C1-Y3-ES Allicdata Electronics
MT53B384M64D4NK-053 WT ES...

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

MT53B384M64D4NK-053 WT ES:B Allicdata Electronics
70V25S45J

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

70V25S45J Allicdata Electronics
71321LA55JI8

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

71321LA55JI8 Allicdata Electronics
7027L55PFI8

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...

7027L55PFI8 Allicdata Electronics