IS41LV16105D-50TLI Allicdata Electronics
Allicdata Part #:

IS41LV16105D-50TLI-ND

Manufacturer Part#:

IS41LV16105D-50TLI

Price: $ 4.13
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 42SOJ
More Detail: DRAM - FP Memory IC 16Mb (1M x 16) Parallel 25ns
DataSheet: IS41LV16105D-50TLI datasheetIS41LV16105D-50TLI Datasheet/PDF
Quantity: 1000
1 +: $ 4.13000
10 +: $ 4.00610
100 +: $ 3.92350
1000 +: $ 3.84090
10000 +: $ 3.71700
Stock 1000Can Ship Immediately
$ 4.13
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - FP
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Application Field and Working Principle of IS41LV16105D-50TLI Memory

IS41LV16105D-50TLI is a 1,048,576-bit sync burst SRAM that is fabricated with 2 transistor (2T) memory cells. It is a high-speed CMOS synchronous dynamic randomaccess memory that stores 1,048,576 words of 8 bits each. This type of memory is high in performance, with an access time of 50 nanoseconds and a cycle time of 100 nanoseconds. With these features, its applications range from general-purpose memory for microcontrollers to large main memory for high-end computers.

The working principle of the IS41LV16105D-50TLI memory is based on the use of a 2T memory cell with a transistor and a capacitor. When the power source is switched off, the capacitors in the memory cell will retain their charge and the contents of the memory cell will be retained. When the power source is switched on, the cells will be read and the contents of the memory cell will be written.

The IS41LV16105D-50TLI memory has two main modes of operation, active read/write mode and standby mode. In the active read/write mode, the memory will be constantly accessing data from the memory cell and writing data to the memory cell. In the standby mode, the memory will not be accessing data from the memory cells but will be periodically recharging the capacitors to ensure data retention.

The IS41LV16105D-50TLI memory uses a synchronous burst architecture to increase memory access speed. This architecture allows for the entire data of a given row to be read or written in sequence with a single command. This helps reduce latency and improve data bandwith. The memory uses a 4-wire interface (data, address, write enable, and chip select) and is designed to be interfaced to both microprocessors and microcontroller systems.

IS41LV16105D-50TLI memory is used in a variety of applications, including gaming consoles, digital music players, and portable devices. It is also used in embedded systems and microcontrollers, including automotive, medical, IoT, and industrial applications. Due to its fast access time and low power consumption, it is also a popular choice for embedded applications with stringent time and power requirements.

In conclusion, IS41LV16105D-50TLI is a high-performance synchronous dynamic random access memory with fast access time, low power consumption and numerous application fields. The memory operates in active read/write and standby modes and uses a 4-wire interface for interfacing with microprocessors and microcontrollers. It is used in a wide range of applications from gaming consoles and portable devices to embedded systems and microcontrollers.

The specific data is subject to PDF, and the above content is for reference

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