IS41LV16100D-50KLI Allicdata Electronics
Allicdata Part #:

IS41LV16100D-50KLI-ND

Manufacturer Part#:

IS41LV16100D-50KLI

Price: $ 4.78
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 42SOJ
More Detail: DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 25ns
DataSheet: IS41LV16100D-50KLI datasheetIS41LV16100D-50KLI Datasheet/PDF
Quantity: 1000
144 +: $ 4.34848
Stock 1000Can Ship Immediately
$ 4.78
Specifications
Series: --
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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Memory technology has been a crucial part of modern life. The memory stored in our computers, mobile phones and other electronic devices helps to mitigate the effects of power failure, improve system performance and allow for larger data storage. The IS41LV16100D-50KLI is a direct mount, low voltage static RAM (SRAM) from ISSI, whose application field and working principle are discussed below.

Application Field

The IS41LV16100D-50KLI is designed to be integrated into microprocessor and digital signal processing systems, providing fast program and data fetch cycles and error-free retrieval of data with its wide 5-ns access time. Its static structure also ensures low power operation. Its operating temperature range of - 40°C to +85°C allows for reliable use in wide temperature ranges and ambient pressures. All these factors make it suitable for use in industrial automation, medical imaging, cellular phones, and other electronics devices.

Working Principle

The IS41LV16100D-50KLI is a static RAM, which means that it does not need to be re-powered to retain its contents when the power is turned off. This SRAM device is made up of 16K x 8 bits of memory cells and arranged in a 16K x 8 RAM array. It has a single-supply operating voltage of 4.5 V to 3.6 V, while its low level output voltage is 0.5 V + 0.1 V and its high level output voltage is 2.0 V - 0.1 V. Each individual memory cell consists of two latches which hold 0s and 1s. The outputs from the latches are shaped by the 10-kΩ resistors, where a ‘1’ is formed by the output of a low-true output latch and a ‘0’ is formed by the output of a high-true output latch.

The IS41LV16100D-50KLI device has an automatic power-down feature which enables it to reduce power consumption. This power-down feature relies on a special power-down output control pin on the device. When the device is in power-down mode, the power-down output control pin is pulled low, whichtells the rest of the system that the RAM is in power-down mode. This power-down mode drastically reduces the current consumption, up to as little as 0.125 mA. In addition to this, the IS41LV16100D-50KLI has an asynchronous output enable control which allows faster output enable access time than with synchronous output enable.

Finally, the IS41LV16100D-50KLI also provides a chip select (CS) input which is used to select the device for operation. This allows for multiple devices to be shared on the same address/data bus. When the CS line is low, the device is enabled and when it is high, the device is disabled.

In conclusion, the IS41LV16100D-50KLI is a low voltage SRAM from ISSI, making it ideal for use in applications such as industrial automation, medical imaging, cellular phones, and other electronics devices. It has a single-supply operating voltage of 4.5 V to 3.6 V with a wide 5-ns access time and a power-down feature. It also has an asynchronous output enable control and a chip select input. This allows the device to be shared on the same address/data bus while ensuring high performance and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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