IS41C16105C-50TLI-TR Allicdata Electronics
Allicdata Part #:

IS41C16105C-50TLI-TR-ND

Manufacturer Part#:

IS41C16105C-50TLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 54TSOP
More Detail: DRAM - FP Memory IC 16Mb (1M x 16) Parallel 25ns ...
DataSheet: IS41C16105C-50TLI-TR datasheetIS41C16105C-50TLI-TR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - FP
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 25ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II
Description

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IS41C16105C-50TLI
-TR Application Field and Working Principle

IS41C16105C-50TLI-TR is a dynamic random access memory (DRAM) chip produced by Integrated Silicon Solution. It is a 16Mb x 16 DRAM, which means it is capable of storing 16 million bits of data at any given point of time. It is a high performance chip with a clock frequency of up to 50MHz, allowing it to access data at up to 800 megabits per second (Mbps). The IS41C16105C-50TLI-TR is suitable for a wide range of applications including industrial, automotive, digital media and telecommunications.

The working principle of the IS41C16105C-50TLI-TR is relatively simple. It is comprised of two main parts, the DRAM array and the memory controller. The DRAM array is responsible for storing the data in the memory and is composed of millions of small cells, each of which is capable of storing one bit of data. The memory controller is responsible for controlling the flow of data between the DRAM array and other system components. The memory controller contains logic circuitry, which allows it to access the contents of the DRAM array and read or write data to it.

The IS41C16105C-50TLI-TR is programmed using a process called memory initialization. This involves setting the parameters for the chip’s clock frequency, refresh rate and voltage levels, as well as configuring the DRAM array. Once the chip is initialized, data can be read from or written to the memory. The memory controller uses a process called memory access to read or write data in the DRAM array. Memory access is achieved by issuing a series of commands to the DRAM array, allowing it to retrieve the data from the cells.

The IS41C16105C-50TLI-TR is a high performance DRAM chip that can be used in a variety of applications. It is capable of storing 16 million bits of data and can access the data at up to 800 Mbps. In addition, the chip can be initialized quickly and efficiently, allowing it to be used in a wide range of applications. With its high performance capabilities, the IS41C16105C-50TLI-TR is an ideal choice for industrial, automotive, digital media and telecommunications applications.

The specific data is subject to PDF, and the above content is for reference

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