IS41LV16100B-60KLI Allicdata Electronics
Allicdata Part #:

IS41LV16100B-60KLI-ND

Manufacturer Part#:

IS41LV16100B-60KLI

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 42SOJ
More Detail: DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns...
DataSheet: IS41LV16100B-60KLI datasheetIS41LV16100B-60KLI Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 30ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 42-SOJ
Description

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IS41LV16100B-60KLI is category of memory components used in modern electronics. It is used to store short duration data, code and other user data within electronics systems. It is commonly used in digital products such as computers, electronic games, mobile phones and embedded systems. The memory has applications in aerospace, automotive and industrial control systems.

Application Field

IS41LV16100B-60KLI memory can be used in many different fields of electronics. It is one of the most commonly used memory components in the world. It is used in computers for storing code and applications. It is also used in mobile phones and other digital devices for the same purpose. The memory is also suitable for use in aerospace and industrial control systems, where the memory must support higher temperatures and a wide range of operating conditions.

Working Principle

IS41LV16100B-60KLI adopts one-transistor logic architecture, which implements reading and writing of data with only one transistor. The memory uses a self-timed write operation, which means that data is written only when the write line is asserted. The data is written in one cycle, allowing it to be written at high speed. The memory also has a special on-chip read sensing circuit that automatically senses the data while it’s being read and stores the data in the on-chip buffer.

Speed and Power Consumption

IS41LV16100B-60KLI memory can offer higher speeds than other memory chips. It has a maximum read/write speed of 90MHz and a maximum random access speed of 75MHz. This makes it suitable for use in applications that require high-speed data transfer. The memory also has a low power consumption. It uses only 3.3 volts, making it very efficient and suitable for portable applications.

Reliability and Durability

The IS41LV16100B-60KLI memory is designed to provide high levels of reliability and durability. It is designed to resist temperature and humidity variations, shock, and vibration. It also has a high level of data retention and an excellent data retention rate of 1.7% over 10 years. This makes it suitable for long-term data storage applications.

Conclusion

IS41LV16100B-60KLI memory is an ideal choice for applications that require high speed, low power consumption, and high levels of reliability and durability. It is used in a wide range of electronics systems and applications, from computers and mobile phones to aerospace and industrial control systems. With its combination of high speed, low power consumption and excellent data retention, it is a popular choice for many different applications.

The specific data is subject to PDF, and the above content is for reference

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