IS41LV16100B-60KLI-TR Allicdata Electronics
Allicdata Part #:

IS41LV16100B-60KLI-TR-ND

Manufacturer Part#:

IS41LV16100B-60KLI-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 42SOJ
More Detail: DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns...
DataSheet: IS41LV16100B-60KLI-TR datasheetIS41LV16100B-60KLI-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 30ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 42-SOJ
Description

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Memory

IS41LV16100B-60KLI-TR is a 16-megabit (2-Mbyte) dynamic random access memory (DRAM) organized as 1,048,576 words by 16 bits. It is classified under the family of low voltage DRAMs that are suitable for a wide range of applications. It is an ideal solution for high speed/low power applications such as portable products, flat panel displays and aeronautics applications. It offers a lower and more efficient voltage source, helping to reduce power consumption and maximize battery life.

Application Field

The IS41LV16100B-60KLI-TR is highly suitable for use in various applications such as, but not limited to, automotive and industrial real-time systems, high end notebooks, PDAs, high performance memory systems, and embedded applications. This low voltage DRAM also enables mobile devices to be thinner and lighter as compared to batteries with higher voltage. As it is sensitive to temperature, it is a good match for low temperature operation. The 1,048,576 words by 16 bits organization also allows for 1,048,576 bits of data to be stored and accessed.

Working Principle

In order to understand the working principle of the IS41LV16100B-60KLI-TR, one must first understand some basics about dynamic RAMs. Dynamic RAMs (DRAMs) hold data in memory cells consisting of capacitors and transistors. In order to read a memory cell, the transistor switch activates and the capacitors discharge any charge. The discharged charge is then converted into a logic state. Storage of data in DRAMs also involves selecting a memory row and memory column. This is done by accessing the row and column address stored in the row and column registers. Data is read in a predetermined cycle with a specific time delay between operations. When the data is read, it is outputted in series via the data I/O pins, and is later converted back to its original logical state before it is stored in the DRAM.

The IS41LV16100B-60KLI-TR has an active power consumption of 3.3V and a standby current of 10µA at 25°C. The functional temperature ranges from -40°C to +85°C. Additionally, the chip has special features such as word line dummy, data masking, and deep sleep mode. This ensures that the memory remains inactive when not in use, helping to keep power consumption as low as possible.

The IS41LV16100B-60KLI-TR has a fast cycle time of 10ns, making it an optimal choice for high speed applications. The chip also has auto-refresh, self-refresh and power-down modes that further reduce power consumption. A typical operating cycle time is 45ns, allowing a maximum data transfer rate of 22 ns.

Overall, the IS41LV16100B-60KLI-TR is an ideal solution for a wide range of applications. Its small form factor, low power consumption, and fast cycle time make it a great choice for embedded applications. Additionally, its sensitive temperature range and special features make it a good choice for low temperature applications.

The specific data is subject to PDF, and the above content is for reference

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