IS41LV16105B-60KL

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IS41LV16105B-60KL Memory Application and Working Principle

The IS41LV16105B-60KL is a 16M-bit, dual voltage, asynchronous low-power CMOS static RAM. This device is organized as 8,192 words by 1,024-bits, utilizing a breakthrough memory-cell design to achieve high-speed read access times while consuming very low power.

The IS41LV16105B-60KL is fabricated using a proprietary process technology to provide the speed of asynchronous SRAMs with the power savings of Synchronous SRAMs on the same die. The architecture operates at a minimum cycle time of 5ns with a supply voltage range of 2.7V to 3.6V. It only requires 50uA (max) Icc in active mode and only 110uA (max) Icc in standby mode.

Overview

The IS41LV16105B-60KL is designed to be used as a replacement for erasable programmable read only memory (EPROMs) and fast page mode DRAMs for applications that need a fast access time. The asynchronous SRAMs are available with an industry standard pin out and package as well as an access time of 5ns max. It also offers a choice of 3.3V and 5V power supply voltages.

Features

The IS41LV16105B-60KL offers several features to make it suitable for a wide range of applications:

• Icc of only 50uA (max) in active mode and 110uA (max) in standby mode
• Fast access time of 5ns max
• High-speed write cycle time of 10ns max
• Industry-standard pin out and package
• 2.7V to 3.6V supply voltage
• Dual-voltage on-chip logic with standard 3.3V and 5V pins
• Low power-down current drain

Applications

The IS41LV16105B-60KL is suitable for a wide range of applications as it can replace EPROMs and fast page mode DRAMs due to its fast access time and low power operation. The device is ideal for use in portable and battery-powered applications where low powering requirements are important. It can also be used in laptop computers, point-of-sale terminals, instrumentation and industrial automation, and office automation products, as well as embedded microcontrollers.

Working Principle

The IS41LV16105B-60KL is an asynchronous static RAM which offers a fast access time of 5ns max and a write cycle time of 10ns max. It is organized as 8,192 words by 1,024 bits, utilizing an innovative memory-cell design to achieve the highest performance. Data is stored in a dual port memory array. This array is designed for fast retrieval of data with minimal clock-cycling delay, ideal for applications requiring high throughput.

The IS41LV16105B-60KL features an advanced dual-voltage architecture providing both 3.3V and 5V I/O pins as well as a dual voltage on-chip logic. This ensures compatibility with 3.3V and 5V logic environments. Additionally, the device features low power-down current drain for extended battery life. It requires just 50uA (max) Icc in active mode and 110uA (max) Icc in standby mode.

Conclusion

The IS41LV16105B-60KL is a low-power, dual voltage asynchronous CMOS static RAM with a fast access time of 5ns max. It is designed to replace EPROMs and fast page mode DRAMs in applications that require fast access times. It offers an industry-standard pinout and package, 2.7V to 3.6V supply voltage, and a dual-voltage on-chip logic with standard 3.3V and 5V pins. The device can be used in a variety of portable and battery-powered applications, laptop computers, point-of-sale terminals, instrumentations and industrial automation, and office automation products, as well as embedded microcontrollers.

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