IS41LV16100B-60KL Allicdata Electronics
Allicdata Part #:

IS41LV16100B-60KL-ND

Manufacturer Part#:

IS41LV16100B-60KL

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC DRAM 16M PARALLEL 42SOJ
More Detail: DRAM - EDO Memory IC 16Mb (1M x 16) Parallel 30ns...
DataSheet: IS41LV16100B-60KL datasheetIS41LV16100B-60KL Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM - EDO
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: --
Access Time: 30ns
Memory Interface: Parallel
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 42-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 42-SOJ
Description

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IS41LV16100B-60KL is a type of memory device from the company Integrated Device Technology (IDT). It is a high-speed CMOS static random access memory (SRAM) with a capacity of 16 megabits. This memory device is ideal for applications which require a high level of performance and reliability.

The IS41LV16100B-60KL is qualified for many different applications, including memory-critical embedded systems, automotive applications, wireless base stations, and networking applications. It offers fast access times and a wide temperature range of 0°C - +85°C. The unit also has a low-power standby mode, ensuring power conservation and high energy efficiency. Additionally, the device comes with built-in error correction and built-in write protection.

The IS41LV16100B-60KL is a high-speed CMOS SRAM which is built with a low-power CMOS process. It operates from a single ±6V power supply with a maximum supply current of 3.2mA. This device has an internal address latch which allows for multi-byte read and write operations with minimal control signals. In addition, the device has three outputs: a data, an address, and a strobe output.

The IS41LV16100B-60KL uses asynchronous static RAM (SRAM) technology with a 4-bit or 8-bit wide data bus. The device functions by storing a logic state or data in the form of a charge or current within each internal memory cell. When an address is applied to the memory, the SRAM accesses the cell that corresponds to that address, and the output of the cell is placed on the data bus in order to be read. Thus, when data is written to one cell in the memory, it may be read from that same cell again, allowing for a memory that can store and access data quickly and reliably.

In summary, the IS41LV16100B-60KL is a high-speed CMOS SRAM which is qualified for many different applications. It offers a low-power standby mode, fast access times, and a wide temperature range. It is equipped with an internal address latch, as well as three outputs. This device utilizes asynchronous static RAM technology to store and access data quickly and reliably. Thus, the IS41LV16100B-60KL is an ideal device to use in applications which require a high degree of performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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