IS64LV25616AL-12TA3 Allicdata Electronics
Allicdata Part #:

IS64LV25616AL-12TA3-ND

Manufacturer Part#:

IS64LV25616AL-12TA3

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 4M PARALLEL 44TSOP II
More Detail: SRAM - Asynchronous Memory IC 4Mb (256K x 16) Para...
DataSheet: IS64LV25616AL-12TA3 datasheetIS64LV25616AL-12TA3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Memory Interface: Parallel
Voltage - Supply: 3.135 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Description

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IS64LV25616AL-12TA3 is a sixteen-megabit asynchronous dual-port SRAM manufactured by ISSI. Utilizing its dual port SRAM function, the device can support concurrent access by multiple processors, allowing complex applications such as memory mirroring and data replication. IS64LV25616AL-12TA3 belongs to the Memory category of integrated circuits. This article will elaborate on its application field and working principle.

IS64LV25616AL-12TA3 utilizes advanced CMOS process technology, offering device features of access speeds of 30ns and 120nm low operating power consumption. It is available in a variety of low-voltage supply configurations and has a typical standby current consumption of 0.9mA. This makes it a suitable solution for various memory applications such as automotive, medical, communication and industrial.

IS64LV25616AL-12TA3 provides two independent 64K x 16-bit dual-port SRAMs and has an integrated I/O register for each port. It also features a selectable write enable pin for each port for individual write enable control. Released with a variety of voltage requirements and supported by nine different supply configurations, its flexibility makes it a great match for a wide range of applications.

The working principle of IS64LV25616AL-12TA3 is based on the principle of dual port SRAM. Its architecture allows two independent accesses to the memory with either access using a separate I/O register bank. This double access allows complex applications such as memory mirroring and data replication where multiple processors can access the same or different segments of the memory. The main RAM uses a static random-access memory (SRAM) cell to store data, while the I/O register can be used to store address and control information.

The I/O registers allow access to two independent registers for each port. Each port has a common write enable signal, enabling write control for both registers separately. Moreover, there is an option of operating the IS64LV25616AL-12TA3 in a non-synchronous mode. In non-synchronous mode, two accesses to two different registers can occur concurrently.

To summarize, IS64LV25616AL-12TA3 is a sixteenth-megabit asynchronous dual-port SRAM manufactured by ISSI. It is an integrated memory circuit capable of complex applications such as memory mirroring and data replication. It is available in a variety of low voltage configurations and consists of two independent 64K x 16-bit SRAMs and individual write enable signals. Its flexibility allows it to be used in automotive, medical, communication and industrial applications. Its main RAM uses a static random-access memory cell to store data, while its I/O register can be used to store address and control information. Its dual port architecture allows two independent accesses to the memory, allowing complex applications. Its non-synchronous mode further enhances its flexibility by allowing two accesses to two different registers to occur concurrently. All these features make IS64LV25616AL-12TA3 a reliable and versatile memory component for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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