IS64LV25616AL-12TLA3

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The IS64LV25616AL-12TLA3 can be classified under memory. It is a 16Mbit (2M x 8 Bits) high speed CMOS static RAM. This device is organized as 2,097,152 words by 8 bits and fabricated with high speed CMOS technology. It operates from a single 3.3V power supply with access time of 12ns. It offers low active power consumption, making it suitable for a wide range of applications. The IS64LV25616AL-12TLA3 is available in 48-pin 400mil TSOPII packages with a 9.4mm body width.

Features of the IS64LV25616AL-12TLA3 include high performance CMOS technology combined with an asynchronous design which allows for zero wait states, fast access times and low active power consumption. It also has advanced write control input for easy memory expansion. The device supports asynchronous page mode which allows the user to access memory in page units. This minimizes the number of control signals required to access multiple locations in the array.

The IS64LV25616AL-12TLA3 has a wide area of applications. It is ideal for the memory buffering of DRAM for high speed computing and for use in high speed gaming applications. The device is also suitable for use in FIFO memories, digital signal processors, cache memories, video RAMs and any other application which requires a low cost, high performance memory solution. One of the most popular uses of this device is in the portable device market, where it provides a cost-effective way of expanding the memory in mobile phones and PDAs.

The IS64LV25616AL-12TLA3 also exhibits robust operation with strong protection. It is a triple byte 32-bit wide addressing device which features internal parity checking and data inversion protection capabilities. This ensures that data integrity is maintained during read and write operations. Further, the on chip write control logic simplifies data transfer between memory arrays. This improves overall system performance and enables the device to respond quickly to any read and write operations.

The working principle of the IS64LV25616AL-12TLA3 is based on asynchronous access. Data is read from or written to the device using the asynchronous interface. This consists of address, read and write signals which are used by the device to carry out the operations. The device has an on-chip write control logic which is used to temporarily store data before it is written to the memory. This reduces the time taken for write operations and increases the speed at which data can be transferred.

The IS64LV25616AL-12TLA3 is a high speed, low power CMOS static RAM with a wide application field. It is compatible with most common memory standards and offers robust protection features. It is an ideal choice for high speed gaming applications, memory buffering of DRAM, FIFO memories, digital signal processors, cache memories, video RAM and any other application which requires a low cost, high performance memory solution.

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