IS64LV51216-12TLA3-TR

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Memory is an essential part of computing systems, both in modern and legacy platforms. From phones to computers, the amount of memory available determines the performance of the device when running various tasks. IS64LV51216-12TLA3-TR is an example of such memory, which finds use in a wide range of projects due to its particular design.

IS64LV51216-12TLA3-TR is a static random access memory (SRAM) which comes in a 16-pin package. It is designed to operate at a voltage of 3.3V to 5.0V while running at up to 90MHz in speed. The typical current consumption is 10mA. It is also suitable for industrial temperature range, with a temperature range of -40°C to +85°C.

IS64LV51216-12TLA3-TR is suitable for applications such as caches, embedded systems, microcontrollers, digital signal processors (DSPs), microprocessors and other micro-architectures. This type of memory is important in these applications due to its low latency and fast data transfer speeds. A WOC of just 4µs ensures that data is not stored in the memory longer than needed.

At the same time, thanks to a result of 64-kbit chip, IS64LV51216-12TLA3-TR has 256-byte (RW Port) organization. A WOC of just 4µs ensures that only the necessary data is stored in the memory. It also has a read pipeline operation that allows reading pre-fetched data prior to the actual read. This helps to reduce latency and improve overall performance.

The working principle of IS64LV51216-12TLA3-TR follows the same principle of all SRAM devices. The cell consists of an MOS transistor connected to an access transistor. The control lines control the access transistor, allowing for data to be written or read. The voltage input on the access line determines the state of the access transistor. When a low voltage is applied, the transistor is open and data can be written or read.

For IS64LV51216-12TLA3-TR, the input is split into two separate lines. One line is designated for write operations, and the other for read operations. When a write operation is desired, the voltage is applied to the write line. For a read operation, the voltage is applied to the read line, enabling the data to be fetched from the memory.

IS64LV51216-12TLA3-TR is a versatile memory device that can be used in a variety of applications and architectures. Its low latency and operating temperature range make it suitable for industrial temperature range applications. Thanks to a WOC of 4µs, it ensures that the data is only stored in the memory for the necessary amount of time.

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