IS64WV102416BLL-10MA3-TR Allicdata Electronics
Allicdata Part #:

IS64WV102416BLL-10MA3-TR-ND

Manufacturer Part#:

IS64WV102416BLL-10MA3-TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: ISSI, Integrated Silicon Solution Inc
Short Description: IC SRAM 16M PARALLEL 48TFBGA
More Detail: SRAM - Asynchronous Memory IC 16Mb (1M x 16) Paral...
DataSheet: IS64WV102416BLL-10MA3-TR datasheetIS64WV102416BLL-10MA3-TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-TFBGA (9x11)
Description

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IS64WV102416BLL-10MA3-TR is a type of memory that is used to store data and can be used in a variety of applications. This memory type is typically mounted on a printed circuit board and has the ability to store up to 16 megabytes of data. In the world of electronics, this memory type is often referred to as a type of Low-power Static Random Access Memory (SRAM).

The IS64WV102416BLL-10MA3-TR is primarily used for low-power applications, such as embedded memory in consumer electronics. This type of memory also has the ability to retain data when power is removed, as well as withstand an ESD (electrostatic discharge) of up to 1500 volts. This makes it well suited for applications that require more reliable data storage and greater levels of protection.

The IS64WV102416BLL-10MA3-TR memory operates by using two transistors per cell. Each cell is arranged in a synchronous design, which allows for the memory device to transfer data in bursts. This type of memory works by using a combination of voltage and current to store data. The combination of the two allows for data to be written, read and cleared from the memory module. When current is applied to the memory module, the voltages in the transistors can be set, thus allowing for the data to be written or stored.

The IS64WV102416BLL-10MA3-TR memory also has the ability to access data at a much higher speed than its counterparts. This is due to the fact that data is transferred in bursts, rather than at a steady rate. This burst transfer allows for a much faster access time of up to 64MHz. Furthermore, this type of memory also has the ability to support up to eight ports, which allows for multiple devices to be connected simultaneously.

In addition to its low-power applications, the IS64WV102416BLL-10MA3-TR has several other uses. This type of memory can be used in industrial automation, audio, automotive and many other applications. Because of its low power requirements and high transfer speed, this type of memory is well suited for the increasingly demanding applications found in the electronics industry.

The IS64WV102416BLL-10MA3-TR memories can be easily programmed and reprogrammed, making them a cost-effective solution for a variety of applications. This type of memory is also available in several different configurations, so it can be customized to suit the specific needs of the application. Furthermore, this memory type is typically available in standard or custom packages, which makes it easier to integrate and use in any system.

In conclusion, the IS64WV102416BLL-10MA3-TR is an ideal choice for low-power applications and high-speed transfers. This type of memory operates by using two transistors per cell, eliminating the need for a refresh circuit and allowing for faster data transfers. Furthermore, this type of memory provides an efficient, cost-effective solution for industrial and embedded applications. As a result, it is one of the most popular types of memory available on the market today.

The specific data is subject to PDF, and the above content is for reference

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