IS64WV51216EDBLL-10CTLA3

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IS64WV51216EDBLL-10CTLA3 is a type of memory component manufactured by ISSI. It is specifically designed for embedded applications and comes with an array of features that make it ideal for those applications. In this article, we will explore the application field and working principle of the IS64WV51216EDBLL-10CTLA3.

The IS64WV51216EDBLL-10CTLA3 is a high-performance, low-power 16Mb (2M x 8) pseudo synchronous dual-port SRAM. Its features make it ideal for use in applications ranging from digital motor control to storage and multimedia applications. It is particularly well suited for those applications requiring frequent access to large data blocks.

The IS64WV51216EDBLL-10CTLA3 has a 1.8 V operating voltage and an operating temperature range of -40 to +85 °C. It comes with a 1000 mA active current and 600 mA standby current. In addition, it has a high operating frequency of 166 MHz and a wide temperature range of -40 to +125 °C.

In terms of its architecture, the IS64WV51216EDBLL-10CTLA3 has a synchronous memory design with dual port access. This allows two separate data blocks to be accessed simultaneously, offering significant advantages in terms of performance. In addition, the device has an output enable pin that allows for easy power down control.

The IS64WV51216EDBLL-10CTLA3 also features a data-retention power-down circuit, which ensures that data stored in the SRAM will not be lost when the device is powered down. This is a crucial feature for memory components that are used in critical applications such as those in the automobile or medical industries.

In terms of its electrical characteristics, the IS64WV51216EDBLL-10CTLA3 has an access time of 8 ns, while its read and write latencies are 33 ns and 64 ns respectively. It also offers a wide voltage range with a VCC of 1.65V to 1.95 V and a VDD of 2.3 V to 3.6 V. The device has a wide output swing of 3.2V. The output impedance is 55 Ω, providing excellent noise immunity.

The IS64WV51216EDBLL-10CTLA3 also features automatic refresh logic, allowing it to refresh its memory from time to time to ensure optimal performance. It is fully compliant with JEDEC DDR3 SDRAM standards and can handle up to 6 banks of data. In addition, it has an on-chip self-timed write to ensure that writes are performed with minimal power consumption.

In short, the IS64WV51216EDBLL-10CTLA3 is an ideal memory component for embedded applications such as digital motor control, storage and multimedia applications. Its wide temperature range, low power consumption and dual-port architecture make it perfect for those applications. In addition, its electrical characteristics provide excellent noise immunity and power efficiency, while its data-retention power down circuit ensures reliable data storage.

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