ISL9N302AS3

Vgs(th) (Max) @ Id:	3V @ 250µA
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package:	I2PAK (TO-262)
Mounting Type:	Through Hole
Operating Temperature:	--
Power Dissipation (Max):	345W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	11000pF @ 15V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	300nC @ 10V
Series:	UltraFET™
Rds On (Max) @ Id, Vgs:	2.3 mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	75A (Tc)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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ISL9N302AS3 is an integrated power switch manufactured by Intersil, formerly R2SE. It is an advanced dual, low side, N-channel power MOSFET designed for high power switching applications. It is part of the Intersil PolarVault eSSD family of dual power MOSFETs, which is designed for applications requiring 2-switch power transmission with two or more MOSFETs. The ISL9N302AS3 combines two power MOSFETs in a single 8-pin surface-mount package, offering better performance and lower cost than a single-channel MOSFET device. It features a 4-volt on-state voltage and a minimum maximum drain to source on-state resistance ratio of 100:1. In addition, it has an adjustable current limit threshold and a low-impedance MOSFET current limit structure providing fast and accurate current limit protection. The ISL9N302AS3 is designed to be used in a wide range of applications, including server, storage and networking applications and industrial control and LED lighting systems. It can also be used in automotive, telecom and consumer products. The ISL9N302AS3 is designed to offer the highest level of efficiency and reliability, making it the ideal choice for applications requiring high power switching. The ISL9N302AS3 is a 4-pin device with a 4-volt drain source on-state voltage. It features two independent gate control pins, two driven synchronous gate control pins and a current limiting function pin. The control gate of one device is connected to the control gate of the other device to provide synchronized switching of both devices. The ISL9N302AS3 has an adjustable current limiting threshold that can be set to allow for maximum current handling capability and system protection. It also features an inductive current limit structure that minimizes the effects of parasitic inductance during operation. This ensures a fast and accurate current limit protection. The ISL9N302AS3 is an ideal choice for applications requiring high power switching due to its high efficiency and reliability. The device is also designed to support a wide range of operating temperatures, which helps to ensure long-term reliability and performance. Furthermore, the integrated power switch is designed to provide industry-leading electrical performance and power management capabilities.

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