IXBH12N300 Allicdata Electronics
Allicdata Part #:

IXBH12N300-ND

Manufacturer Part#:

IXBH12N300

Price: $ 17.47
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 3000V 30A 160W TO247
More Detail: IGBT 3000V 30A 160W Through Hole TO-247AD (IXBH)
DataSheet: IXBH12N300 datasheetIXBH12N300 Datasheet/PDF
Quantity: 133
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 17.47000
10 +: $ 16.94590
100 +: $ 16.59650
1000 +: $ 16.24710
10000 +: $ 15.72300
Stock 133Can Ship Immediately
$ 17.47
Specifications
Series: BIMOSFET™
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: --
Voltage - Collector Emitter Breakdown (Max): 3000V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 100A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 12A
Power - Max: 160W
Switching Energy: --
Input Type: Standard
Gate Charge: 62nC
Td (on/off) @ 25°C: --
Test Condition: --
Reverse Recovery Time (trr): 1.4µs
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD (IXBH)
Description

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IXBH12N300 Application Field and Working Principle

The IXBH12N300 is an insulated gate bipolar transistor (IGBT) module developed by IXYS. It is a single, three-phase bridge type module, suitable for medium-voltage applications such as induction heating and motor control.

The IXBH12N300 is capable of providing an output of 1200V DC with a current rating of 135A. It is equipped with temperature, current and voltage protection, allowing it to be used in high-reliability applications. In addition, it features a voltage controlled switch and is designed with optimized switching characteristics to ensure fast rise times, low saturation voltages, and low power dissipation.

An Overview of IGBT Technology

IGBTs are power semiconductors that combine the properties of both bipolar transistors and MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). This allows them to offer advantages such as high reliability, low switching losses, and a high input impedance, making them suitable for high-efficiency power conversion applications.

IGBTs are composed of three components: an insulated-gate bipolar transistor, a diode and a resistor. This combination provides a faster switching speed and lower power losses, resulting in higher efficiency. The IGBT is also able to withstand large current loads due to its increased ruggedness.

How the IXBH12N300 Works

The IXBH12N300 works by controlling the electric current that is applied to the load. When the electric current is applied, it passes through the module, activating the insulated-gate component, which in turn switches the electric current to the motor winding or induction coils.

The module also takes advantage of its low latency switching speed to ensure that the motor can reach full speed quickly, while its temperature and current protection features are designed to prevent any over-current or over-temperature conditions from occurring.

Overall, the IXBH12N300 is an ideal choice for a wide range of medium-voltage applications, thanks to its high reliability, low power dissipation, and fast switching speed.

The specific data is subject to PDF, and the above content is for reference

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