IXBH5N160G

Power - Max:	68W
Supplier Device Package:	TO-247AD (IXBH)
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Test Condition:	960V, 3A, 47 Ohm, 10V
Td (on/off) @ 25°C:	--
Gate Charge:	26nC
Input Type:	Standard
Switching Energy:	--
Series:	BIMOSFET™
Vce(on) (Max) @ Vge, Ic:	7.2V @ 15V, 3A
Current - Collector (Ic) (Max):	5.7A
Voltage - Collector Emitter Breakdown (Max):	1600V
IGBT Type:	--
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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IXBH5N160G application field and working principle

Introduction

IXBH5N160G is a single IGBT device produced by Infineon Technologies. It is suitable for various applications such as UPS, welding equipment and motor drives. This article will discuss its application field and working principle.

Application Field

IXBH5N160G is a low-voltage, non-isolated, industrial-grade, high power switching device. It is a single, rugged IGBT device specifically designed for power electronic applications that require high levels of reliability and robustness. Its rugged construction and low-voltage design make it suitable for a broad range of applications in industrial, commercial, and military systems.IXBH5N160G is suitable for a variety of industrial and commercial applications, including Uninterruptible Power Supplies (UPS), welding equipment, motor drives, renewable energy storage and generation, and electric vehicle systems. In UPS systems, the IXBH5N160G can provide high-reliability performance in switching applications, enabling accurate and reliable power conversion when needed. In welding equipment applications, IXBH5N160G is ideal for controlling the arc welding process, where switching requirements are not as severe and accuracy is not as critical as other applications. In motor drives and electric vehicle systems, the IXBH5N160G is capable of providing reliable and efficient power and current control without the need for an external braking circuit.

Working Principle

The IXBH5N160G is a single IGBT device that uses the acceleration of holes or electrons to create a conducting channel between two terminals. The device consists of three layers – a anode layer, a cathode layer and a control gate layer. The anode is connected to the positive voltage supply and the cathode is connected to the negative voltage supply. The control gate is connected to the gate control circuit, which is used to control the operation of the device.When a positive gate voltage is applied to the IXBH5N160G, the electrons in the anode layer and the holes in the cathode layer are attracted to the gate layer. This causes a conducting path between the anode and the cathode layers, allowing current to flow between the two layers. When the gate voltage is removed, the current flow is stopped, effectively turning the device “off”.In order to ensure the reliability and robustness of IXBH5N160G, the device features a robust construction and is designed to operate efficiently in temperatures up to 175°C. In addition, the IXBH5N160G features a Soft Turn-Off (STO) circuit, which allows the device to be turned off safely and smoothly, without producing any abrupt waveforms that may cause interference or damage.

Conclusion

IXBH5N160G is a single IGBT device that is suitable for a variety of industrial and commercial applications. The device offers high levels of reliability and robustness, making it suitable for power electronic applications that require efficient and reliable power conversion. Its robust construction and low-voltage design also make it well-suited for applications involving motor drives and electric vehicles. This device also features a Soft Turn-Off (STO) circuit, which allows it to be safely and smoothly turned off without producing unwanted waveforms.

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