IXBH16N170 Allicdata Electronics

IXBH16N170 Discrete Semiconductor Products

Allicdata Part #:

IXBH16N170-ND

Manufacturer Part#:

IXBH16N170

Price: $ 7.99
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1700V 40A 250W TO247AD
More Detail: IGBT 1700V 40A 250W Through Hole TO-247AD (IXBH)
DataSheet: IXBH16N170 datasheetIXBH16N170 Datasheet/PDF
Quantity: 1
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 7.98840
10 +: $ 7.74875
100 +: $ 7.58898
1000 +: $ 7.42921
10000 +: $ 7.18956
Stock 1Can Ship Immediately
$ 7.99
Specifications
Switching Energy: --
Supplier Device Package: TO-247AD (IXBH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 1.32µs
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 72nC
Input Type: Standard
Series: BIMOSFET™
Power - Max: 250W
Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 16A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 40A
Voltage - Collector Emitter Breakdown (Max): 1700V
IGBT Type: --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The IXBH16N170 is an ultrafast, high current capable and high power handling IGBT transistor. Commonly found in applications such as variable frequency drive systems and welding inverters, this device is a type of insulated gate bipolar transistor (IGBT) and is an ideal solution for many high-performance applications. In this article we will discuss the IXBH16N170 application areas, and also its working principle.

IXBH16N170 Application Areas

The IXBH16N170 IGBT is used in a variety of applications that require high power handling and high current capacity. Some of these applications include:

  • Variable frequency drive systems
  • Welding inverters
  • UPS systems
  • DC motor drives
  • High frequency switching power supplies
  • High-power automotive electronic systems.

The IXBH16N170 transistor is also commonly used in many industrial and commercial applications, including welding, DC motor control systems, rotating equipment, and in high-voltage DC converters.

IXBH16N170 Working Principle

The IXBH16N170 IGBT consists of a gate, an emitter and a collector. When a voltage is applied to the gate, the resistance of the IGBT decreases, allowing more current to flow between the emitter and the collector. As the gate voltage is increased, the resistance becomes lower and more current is allowed to flow.

The most important feature of an IGBT is its ability to handle high current. The IXBH16N170 can handle currents of up to 1600 A (at 25°C) with a collector current rise time of 16 nanoseconds. This makes it a highly efficient device for applications that require fast switching and high current capability.

In addition to its high current handling capability, the IXBH16N170 also has a very low forward voltage drop. This makes it a good choice for applications that require low loss device operation. At 150°C, the forward voltage drop is typically less than 2.5 V.

The IXBH16N170 also has excellent thermal dissipation characteristics. It has a low thermal resistance, meaning that it is able to dissipate the heat from the device quickly and efficiently. This helps to prevent the IGBT from overheating and ensures that it performs optimally for longer.

Conclusion

The IXBH16N170 is an ultrafast, high current capable and high power handling IGBT. With its excellent thermal performance and low forward voltage drop, this device is an ideal solution for many high-performance applications. From variable frequency drive systems to welding inverters, the IXBH16N170 is the perfect choice for all your switching needs.

The specific data is subject to PDF, and the above content is for reference

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