
IXBH2N250 Discrete Semiconductor Products |
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Allicdata Part #: | IXBH2N250-ND |
Manufacturer Part#: |
IXBH2N250 |
Price: | $ 7.71 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 2500V 5A 32W TO247 |
More Detail: | IGBT 2500V 5A 32W Through Hole TO-247AD (IXBH) |
DataSheet: | ![]() |
Quantity: | 55 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
1 +: | $ 7.71120 |
10 +: | $ 7.47986 |
100 +: | $ 7.32564 |
1000 +: | $ 7.17142 |
10000 +: | $ 6.94008 |
Series: | BIMOSFET™ |
Packaging: | Tube |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
IGBT Type: | -- |
Voltage - Collector Emitter Breakdown (Max): | 2500V |
Current - Collector (Ic) (Max): | 5A |
Current - Collector Pulsed (Icm): | 13A |
Vce(on) (Max) @ Vge, Ic: | 3.5V @ 15V, 2A |
Power - Max: | 32W |
Switching Energy: | -- |
Input Type: | Standard |
Gate Charge: | 10.6nC |
Td (on/off) @ 25°C: | -- |
Test Condition: | -- |
Reverse Recovery Time (trr): | 920ns |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247AD (IXBH) |
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The IXBH2N250 is a 3rd generation Insulated Gate Bipolar Transistor (IGBT), specifically designed for high-speed switching applications. It is a single-channel device that is designed to operate within a wide range of frequency ranges, including 100 kHz to 2 MHz, making it suitable for high frequency switching and motor control. The IXBH2N250 is capable of handling up to 175 amps and can withstand voltages up to 600 volts.
The IXBH2N250 is a part of the IXYS family of economical IGBTs. Its flexibility and low cost makes it an ideal choice for a wide range of applications and industries, such as home appliance control, lighting control, motor and inverter control, and robotic automation control.
The main components of this device are the emitter and collector regions, insulated gate field-effect transistor (IGFET), insulated gate bipolar transistor (IGBT), and a drain region. This device is an ideal switch because it combines the low threshold behavior of an IGFT with the higher frequency operation of an IGBT, while consuming lower power. The device is capable of switching currents in a very short time, allowing the user to control the direction and magnitude of current in a very short period of time.
The IXBH2N250 works by first allowing current to flow between the insulated gate and the emitter, which then passes through the collector, and finally to the drain. The IGBT then uses voltage applied to the gate to control the forward current flow and switch the device on and off, allowing it to be used to control the current magnitude and direction.
The IXBH2N250 is capable of operating with low voltage and current losses, reducing the demand for energy consumption. It has extremely low turn-on and turn-off losses, which reduces the need for an over-voltage clamp circuit. This device also has an extremely fast response time, which ensures that its switching is extremely accurate and reliable.
This device is ideal for applications that require controlled and regulated current and voltage. It can be used in power supplies, motor controllers, and motor drives, as well as lighting and home appliances. This device also offers a wide range of features, including high speed switching, low input and output capacitance, and low power consumption.
The IXBH2N250 is a reliable device, with excellent electrical performance properties. It\'s efficient design and high operating temperature range make it the perfect choice for applications requiring reliable and high-performance switching.
The specific data is subject to PDF, and the above content is for reference
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