IXBH40N160 Discrete Semiconductor Products

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The IXBH40N160 is a single gate IGBT (Insulated Gate Bipolar Transistor) from IXYS that surpasses the performance of conventional MOSFETs, offering a combination of low conduction and switching losses. The IXBH40N160 is a robust, highly efficient and fast device that is suitable for applications such as motor control and lighting.

The IXBH40N160 allows the user to choose a wide range of VCE (collector-emitter voltage) and VGE (gate-emitter voltage) to maximize their load requirements. Its higher peak currents compared to normal MOSFETs, together with extremely low output capacitance, allow for reduced switching losses and a higher frequency operation. It has a range of 350V to 400V, and its collector current is capable of up to 40A.

The IXBH40N160 is designed with a few features to maximize its performances, such as the IX-TrenchT MOS Level-Shifted trench gate structure which increases the efficiency of the anti-parallel freewheeling diode in order to reduce switching losses. The high mobility and efficient vertical conduction enable the device to exceed the performance of conventional MOSFETs. The unique soft recovery free-wheeling diode helps in reducing the shoot-through current and switching losses.

IXBH40N160 has a wide range of applications. It can be used for switching power in motor control, lighting, Uninterruptible Power Supplies (UPS), and other related equipment due to its high switching performance and fast turn-off speed. Additionally, they are designed to have low conduction losses and power dissipation, and are ideal for DC-DC converters, solar inverters, voltage regulators, and many other industrial motor control systems. It is also suitable for high frequency applications due to its low output capacitance.

The IXBH40N160 has an easy and straightforward working principle. This device works like an N-channel MOSFET, but with a few enhanced features that make it more efficient. When the gate-emitter voltage rises above the threshold voltage, the MOSFET turns on and current starts flowing from Collector to Emitter (On-State). When a positive voltage is applied to the gate, current starts flowing. When the gate-emitter voltage drops below the threshold voltage, it turns off and the current flow stops (Off-State). The soft-recovery freewheeling diode helps in reducing the shoot-through current and switching losses.

Overall, the IXBH40N160 single gate IGBT is designed to offer high performance, and low conduction and switching losses, making it suitable for applications such as motor control and lighting. It has a robust structure and high output current rating, allowing for reduced switching losses and higher frequency operation. The IX-TrenchT MOS Level-Shifted trench gate structure and soft recovery free-wheeling diode further help in achieving low conduction and switching losses. It is ideal for DC-DC converters, solar inverters, voltage regulators, and many other industrial motor control systems.

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