IXBH20N360HV

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An IGBT, or Insulated Gate Bipolar Transistor, combines the input control of a MOSFET and the low saturation voltage of a BJT, making it suitable for higher power applications than a conventional MOSFET. IXBH20N360HV is a particular type of IGBT available in the market. Let’s have a look at its application field and working principle.

Application Field

Due to their high power handling capacity and low on-state voltage drop, IXBH20N360HV are typically used in power electronic applications, such as electric drives, welding, and uninterruptible power supply (UPS). The IXBH20N360HV also offers a low switching loss and a high surge current capability. These features make it suitable for industrial and automotive applications.

Working Principle

The IXBH20N360HV is a three-terminal device consisting of two p-n junctions connected in anti-parallel. The two outer terminals are the collector and emitter whereas the one in middle is the gate. By applying a voltage at the gate terminal, the two inner p-n junctions can be controlled. When a negative voltage is applied at the gate, the voltage drop across the two p-n junctions increase, resulting in an increased current flow. On the other hand, when a positive voltage is applied, the two p-n junctions become reverse biased and the current flow is stopped. The IXBH20N360HV has an insulated gate which eliminates the need for a heat sink and is the reason for its efficient power handling capacity.

The IXBH20N360HV has a wide bandgap of 1.7 eV and a low on-state voltage drop of 1.7V. This makes it suitable for high power applications. Moreover, the IXBH20N360HV has a low switching loss of 0.3V and a high surge current capability which enables it to switch rapidly. These features make the IXBH20N360HV an ideal choice for industrial applications. The IXBH20N360HV also offers a low leakage current and a low gate charge, resulting in an overall improved efficiency.

To conclude, the IXBH20N360HV is a highly efficient IGBT with superior power handling capacity and low on-state voltage drop. The wide bandgap of 1.7 eV and the low switching loss make it suitable for high power applications. The IXBH20N360HV also has a high surge current capability and a low leakage current, resulting in an improved efficiency. Due to its excellent properties, the IXBH20N360HV is used in a wide range of applications, such as electric drives, welding, and UPS.

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