IXBH9N160G Allicdata Electronics

IXBH9N160G Discrete Semiconductor Products

Allicdata Part #:

IXBH9N160G-ND

Manufacturer Part#:

IXBH9N160G

Price: $ 5.06
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 1600V 9A 100W TO247AD
More Detail: IGBT 1600V 9A 100W Through Hole TO-247AD (IXBH)
DataSheet: IXBH9N160G datasheetIXBH9N160G Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 4.59711
Stock 1000Can Ship Immediately
$ 5.06
Specifications
Power - Max: 100W
Supplier Device Package: TO-247AD (IXBH)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: 960V, 5A, 27 Ohm, 10V
Td (on/off) @ 25°C: --
Gate Charge: 34nC
Input Type: Standard
Switching Energy: --
Series: BIMOSFET™
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
Current - Collector Pulsed (Icm): 10A
Current - Collector (Ic) (Max): 9A
Voltage - Collector Emitter Breakdown (Max): 1600V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An IXBH9N160G transistor can be classified as a member of the IGBTs – Single family. These transistors are commonly used to switch on and off electrical signals. The IXBH9N160G transistor is used in several high-powered applications, along with noise sensitive applications, due to its low on-state resistance.

The IXBH9N160G transistor is a MOS-controlled Thyristor, better known as a Metal Oxide Field Effect Transistor (MOSFET), controlled by a Thyristor. As a result, the IXBH9N160G transistor can be used to switch voltages up to 600 volts. The IXBH9N160G transistor is suitable for use in automotive, consumer and industrial applications, such as controlling motor drives and UPS power supplies. It has the advantage of being able to switch very quickly, in addition to having a high input impedance and low dissipation.

When it comes to how the IXBH9N160G transistor works, it can be broken down into two main stages: the switching process and the power transference process. The switching process involves a MOSFET gate and a Thyristor, which are connected in series. When a signal is received, it is converted by the MOSFET gate into a voltage signal that can control the Thyristor. The Thyristor then acts as a switch, providing control over the power transference process. In this process, the IXBH9N160G transistor can act as a bridge between two different power sources and can also be used to power a device from a single power source. This makes the IXBH9N160G a capable device for switching low power devices and for enabling complex circuitry.

The IXBH9N160G transistors are designed for switching extremely high current and voltage levels. As such, the IXBH9N160G transistors are rated for high current and voltage levels, meaning that the device is able to switch large currents and voltages quickly and efficiently. The IXBH9N160G transistors feature a blocking voltage of 600 volts and a current rating of 20 amps. The IXBH9N160G transistors are also a good choice for noise-sensitive applications due to their low on-state resistance. As such, the IXBH9N160G transistors are ideal for switching a variety of high-current and high-voltage applications, such as motor drives, UPS power supplies and automotive applications.

In conclusion, the IXBH9N160G is a reliable MOS-controlled Thyristor that has numerous applications. It is capable of dealing with high current and voltage levels, making it a good choice for a variety of different applications. As well as being suitable for switching low power devices, the IXBH9N160G transistor also has the benefit of being capable of powering devices from a single power source. The IXBH9N160G is a robust device, with a blocking voltage of 600V, making it suitable for automotive applications and noise sensitive applications, as well as other high-power applications.

The specific data is subject to PDF, and the above content is for reference

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