IXBH42N170

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The IXBH42N170 is a single IGBT transistor component. IGBT stands for "Insulated Gate Bipolar Transistor" and is a type of transistor that combines certain characteristics of both MOSFET and bipolar transistors. This component is a low-voltage, low-power component and is suitable for applications where a direct switching component is required.

This component comprises a die containing two IGBTs for each component, one for N-channel and one for P-channel. The component\'s gate-emitter voltage rating is 42 to -170 volts with a current rating of 17A. The component has a maximum collector-emitter voltage of 400V and a collector-emitter saturation voltage of 2.3V at 10A.

The IXBH42N170 is typically used in applications that require power switching, such as AC synchronous motor controls, PFC flyback applications, IGBT inverters, and DC-AC or AC-DC converters. The component is also suitable for the control of inductive and resistive loads, such as electric appliances and lighting.

The working principle of the IXBH42N170 is based on the bipolar transistor arrangement used in IGBTs. In this arrangement, an internal NPN transistor and an internal PNP transistor are connected back-to-back. The two transistors form two separate base-emitter current paths. The IGBT is biased in such a way that the NPN transistor conducts in the forward direction and the PNP transistor conducts in the reverse direction.

When the gate terminal of the component is driven with a positive voltage, the N-channel IGBT turns on, allowing current to flow from the collector to the emitter. When the gate terminal of the component is driven with a negative voltage, the P-channel IGBT turns on, allowing current to flow from the emitter to the collector. The voltage applied to the gate terminal determines the amount of current that can flow through the IGBT.

In addition to the basic switching of alternating current, the IXBH42N170 can also be used as a chopper. Investing a series of on/off pulses to the gate terminal can result in a regulated steady-state current flow in either direction, depending on the voltage applied. This can be used for applications such as pulse width modulation, for example for controlling the speed of electric motors.

Due to its low power dissipation and low on-state resistance, the IXBH42N170 is an ideal choice for use in applications where power efficiency is a priority. The component is fast and reliable, with a short turn-off time of 7.5 us, making it well suited for use in switching applications.

The IXBH42N170 is a single IGBT transistor component that is used in a variety of applications requiring power switching. The component comprises two IGBTs, one for N-channel and one for P-channel. Its switching principle is based on the bipolar transistor arrangement of IGBTs, whereby an internal NPN and PNP transistor are connected back-to-back, resulting in two separate current paths. The component is fast and reliable, and its low power dissipation and low on-state resistance make it an ideal choice for applications where power efficiency is a priority.

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