| Allicdata Part #: | IXFD14N100-8X-ND |
| Manufacturer Part#: |
IXFD14N100-8X |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CHANNEL 1000V DIE |
| More Detail: | N-Channel 1000V Die |
| DataSheet: |  IXFD14N100-8X Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | HiPerFET™ |
| Part Status: | Obsolete |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 1000V |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drive Voltage (Max Rds On, Min Rds On): | -- |
| Rds On (Max) @ Id, Vgs: | -- |
| Vgs(th) (Max) @ Id: | -- |
| Vgs (Max): | -- |
| FET Feature: | -- |
| Power Dissipation (Max): | -- |
| Operating Temperature: | -- |
| Mounting Type: | -- |
| Supplier Device Package: | Die |
| Package / Case: | Die |
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The IXFD14N100-8X MOSFET is a high-performance and cost-effective solution for digital and linear applications. It is a single power device with a typical drain-source voltage of 1000V. This device is designed to deliver excellent performance and reliability, making it suitable for many applications including general purpose power control, voltage control, and ultra low frequency switching.
The IXFD14N100-8X features an integrated logic level gate drive, which minimizes the need for additional components and simplifies the design process. It has an integrated ESD protection structure and a two-way diode for overcharge protection. The device also comes with a low parasitic capacitance that improves the frequency characteristic of the device. Additionally, this device is RoHS-compliant.
At its most basic, the IXFD14N100-8X works by creating a channel between the source and drain that allows electricity to flow through it. When a voltage is applied to the gate, it forms an electrical field that modulates the channel width and allows current to flow when a voltage is applied between the source and drain. This action is analogous to a switch that is opened and closed when a voltage is applied.
The IXFD14N100-8X can be used in a number of applications such as power supply circuits, drive circuits, and motor control applications. It can also be used in audio amplifiers and switching systems. The device can operate up to an ambient temperature of 175°C, and its on-resistances are as low as 0.17mΩ to reduce power loss.
The IXFD14N100-8X MOSfet is a great solution for a variety of applications due to its excellent performance, reliability, and cost effectiveness. Its integrated logic level gate drive and low parasitic capacitance improve its frequency performance. Additionally, its ESD protection and overcharge protection make it suitable for many applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| IXFD14N100-8X | IXYS | 0.0 $ | 1000 | MOSFET N-CHANNEL 1000V DI... |
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