IXFD80N10Q-8XQ Allicdata Electronics
Allicdata Part #:

IXFD80N10Q-8XQ-ND

Manufacturer Part#:

IXFD80N10Q-8XQ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CHANNEL 100V DIE
More Detail: N-Channel 100V Die
DataSheet: IXFD80N10Q-8XQ datasheetIXFD80N10Q-8XQ Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: HiPerFET™
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: --
Drive Voltage (Max Rds On, Min Rds On): --
Rds On (Max) @ Id, Vgs: --
Vgs(th) (Max) @ Id: --
Vgs (Max): --
FET Feature: --
Power Dissipation (Max): --
Operating Temperature: 150°C (TJ)
Mounting Type: --
Supplier Device Package: Die
Package / Case: Die
Description

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The IXFD80N10Q-8XQ is a type of power MOSFET, or insulated-gate field effect transistor, which has uses in a variety of industries. These transistors are designed to switch electric current on and off quickly, making them ideal for power switching, audio amplifiers, voltage converters and regulated power supplies.

A MOSFET is built with a metal-oxide semiconductor gate structure. This gate structure acts as an insulating layer, which helps control the movement of electrons. This allows a MOSFET to control large amounts of power with a low voltage and small current, making them highly efficient.

The IXFD80N10Q-8XQ is a single-die device, meaning that it has two main components – a drain and a source – instead of multiple components. This makes it well-suited for applications where size, weight, and thermal stress are important. The device has an on-resistance of 0.27Ω @ VGS = 10V, an on-state resistance of 2.5Ω, an off-state capacitance of 7.3nF, and an on-state capacitance of 28.6nF.

The IXFD80N10Q-8XQ can be used in a wide variety of applications due to its low cost, low gate charge, and low on-resistance. These applications include but are not limited to computer power supplies, motor drives, solenoid drivers, motor control, and industrial automation. The device also has a host of safety features, including electrostatic discharge (ESD) protection and over-temperature protection.

The IXFD80N10Q-8XQ\'s working principle is based on the field-effect transistor (FET) architecture. When voltage is applied to the gate, it induces an electric field which attracts charge carriers to the surface of the source and drain regions. When these charge carriers are in place, they act as an electric conductor, allowing current to flow between the source and drain regions. Turning off the voltage to the gate switches off the electric field, which in turn switches off the current flow.

The IXFD80N10Q-8XQ is a high-performance power MOSFET, offering excellent performance in applications where size, cost, and efficiency are important. It has a wide range of applications in industries such as computer power, motor drives, solenoid drivers, motor control, and industrial automation. Its working principle, based on the FET architecture, is simple yet effective and allows the device to switch power on and off in a quick and efficient manner.

The specific data is subject to PDF, and the above content is for reference

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