IXFD26N60Q-8XQ

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The IXFD26N60Q-8XQ is a enhancement mode N-channel silicon field-effect transistor (FET) from Infineon specifically designed for use in high current, high voltage motor control applications. It is part of the IXYS Advanced High Integrity Power MOSFET family and is ideal for high switching frequencies, high efficiency, and low-noise operations. This device has been designed to offer a high power density on a very small die size and has a maximum current rating of 8A and a maximum voltage rating of 600V. It has low on-state resistance and excellent thermal performance to help reduce overall power losses and maximize efficiency.

The IXFD26N60Q-8XQ is a vertical double-diffused MOSFET (VDMOS). This type of FET uses a vertical structure with an additional epitaxial layer inserted between the source and the gate in order to reduce the Miller capacitance and improve performance. The VDMOS has higher transconductance compared to standard power MOSFETs, allowing it to achieve higher current densities in a much smaller package than traditional devices.

The IXFD26N60Q-8XQ operates on the principle of channel enhancement. In channel enhancement mode, a voltage is applied between the gate and the source, which controls the operation of the device. The voltage causes the FET channel between the drain and the source to be partially opened or closed, resulting in a current flow through the device. This current flow is determined by the gate voltage, the threshold voltage of the device, and the supply voltage. When the gate voltage is higher than the threshold voltage and lower than the supply voltage, the FET will be partially opened and the current flow will be higher than it was at the threshold voltage. When the gate voltage is lower than the threshold voltage, the FET will be completely closed and there will be virtually no current flow.

The IXFD26N60Q-8XQ offers excellent high frequency pulse handling capabilities and temperature stability, making it a suitable choice for high current and high voltage switching applications such as high-torque motor control. Its low on-state resistance and high current rating make it suitable for power MOSFET applications in applications such as switching power supplies, DC-DC converters, motor drives and variable speed drives.

In addition, this device is capable of handling large dV/dt, which makes it particularly suitable for high voltage switch mode power supplies. Its built-in protection mechanisms include an overcurrent shutdown capability, temperature sensing circuitry and integrated clamp diodes for preventing transient surges.

The IXFD26N60Q-8XQ is offered in an industry-standard SOT86 plastic package and is compatible with standard SMT assembly processes. It also has a low lead inductance for improved switching performance and a low resistance tab for improved thermal performance. It is available in a variety of other packages as well, allowing it to be used in a wide range of high-power applications.

Overall, the IXFD26N60Q-8XQ is an excellent choice for high current and high voltage motor control applications due to its high thermal performance, low on-state resistance and high current rating. Its low lead inductance and low resistance tab make it suitable for applications involving high-frequency pulse switching, while its integrated protection mechanisms provide an enhanced level of safety. The IXFD26N60Q-8XQ is a reliable and cost effective solution for high-current and high-voltage switching applications.

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