IXFD15N100-8X

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The IXFD15N100-8X transistor is a fast Igbt (Insulated Gate Bipolar Transistor) from IXYS Corporation that uses a depleted mode Field Effect Transistor (FET) to control the base current. It is speedy, durable, and offers high thermal stability. It is designed in an ultra-compact single-side-cooled package, reducing system complexity and saving space. This FET is suitable for appliance or industrial applications and is ideal for high side switching applications such as those found in inverters, motor control systems, and switch-mode power supplies.

The IXFD15N100-8X transistor is made up of four components with three terminals—an insulated gate, a source, a drain, and an anode. Inside are two back-to-back thyristors; a conducting FET and a blocking diode. When the insulated gate receives a positive voltage signal it turns the FET “on” and current flows between the source and drain. The FET is in a low-resistance conducting state and the blocking diode is cut off. When the insulated gate receives a negative voltage signal, the FET is turned “off” and current ceases to flow between the source and drain. The FET is in a high-resistance state and the blocking diode is turned “on”.

The IXFD15N1000-8X has several characteristics that make it ideal for specific applications. First, because the transistor is a low-side switch, it can be used in a direct voltage system as a gate driver with a gate capacitively coupled to the gate. This eliminates the need for an inverting logic circuit while maintaining high speed and low power loss. Second, the device has full rated current and voltage ratings at temperatures of up to +125°C which is ideal for high temperature applications. Third, it has a very low on-state resistance and a high energy handling capability. Finally, it has a low switching speed and a low power loss in both the on and off states.

The IXFD15N100-8X is an ideal transistor for many industrial and home applications. It is used in a variety of applications from motor control and illumination to high voltage systems. It has a low on-state voltage drop due to its extremely low on-resistance and its wide operating temperature range makes it suitable for use in high temperature applications. Furthermore, the ultra-compact package of the IXFD15N100-8X transistor allows for a reduction in system complexity, reducing costs associated with installation and maintenance. Because of these attributes, the IXFD15N100-8X is a reliable and efficient transistor capable of delivering high performance in a variety of applications.

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