IXFE23N100 Allicdata Electronics
Allicdata Part #:

IXFE23N100-ND

Manufacturer Part#:

IXFE23N100

Price: $ 23.28
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 21A ISOPLUS227
More Detail: N-Channel 1000V 21A (Tc) 500W (Tc) Chassis Mount S...
DataSheet: IXFE23N100 datasheetIXFE23N100 Datasheet/PDF
Quantity: 1000
1 +: $ 21.16800
Stock 1000Can Ship Immediately
$ 23.28
Specifications
Vgs(th) (Max) @ Id: 5V @ 8mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 500W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 430 mOhm @ 11.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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IXFE23N100 is a single, laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET). It is a voltage-controlled field-effect transistor is used in the industrial and automotive industries due to the features of low on-state resistance, high power handling and ruggedness. This device should be used for operating frequencies up to 1 MHz and for voltage ratings up to 200V.

The IXFE23N100 LDMOSFET is made up of three regions, a source, a drain, and a gate. Each region is connected together by semiconductor material, which allows the device to change its characteristics depending on the gate voltage. An insulated gate voltage is applied to the gate region, and this gate voltage controls the current which flows from the source to the drain.

The working principle behind the IXFE23N100 is that the gate voltage will control the current flowing through the semiconductor material. The current passing through the semiconductor material will be proportional to the gate voltage applied; the greater the gate voltage, the greater the current. When the gate voltage increases, the current passing through the LDMOSFET will increase. This is because the gate voltage modifies the electrical properties of the semiconductor material, allowing more current to pass through the device.

The working principle behind the IXFE23N100 is based on the MOSFET. The MOSFET is a voltage-driven current-controlled device that involves a thin metallic gate dielectric positioned between an n-doped and a p-doped semiconductor layer. By applying a gate voltage, a channel is created in the n-doped semiconductor that allows current to flow from the source to the drain. The current flow will then follow the applied gate voltage and increases as the voltage increases.

The IXFE23N100 is ideal for use in a variety of applications, including high-frequency switching, power conversion, audio power amplifiers, motor controllers and power supplies. The IXFE23N100 is capable of providing high current output, high bandwith and low on-resistance. It also features a high breakdown voltage and excellent switching characteristics. The IXFE23N100 is also highly reliable and can be used in operating temperature ranges up to 75°C.

The IXFE23N100 is an important component in many industrial and automotive applications. It is well suited to power conversion, high-frequency switching and audio power amplifiers. It is also used to control motor speed during operation. Additionally, the IXFE23N100 can be used in power supplies due to its low on-resistance and high current output. The IXFE23N100 is a versatile component with excellent performance and reliability.

The specific data is subject to PDF, and the above content is for reference

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