
Allicdata Part #: | IXFE23N100-ND |
Manufacturer Part#: |
IXFE23N100 |
Price: | $ 23.28 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 1000V 21A ISOPLUS227 |
More Detail: | N-Channel 1000V 21A (Tc) 500W (Tc) Chassis Mount S... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | $ 21.16800 |
Vgs(th) (Max) @ Id: | 5V @ 8mA |
Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | SOT-227B |
Mounting Type: | Chassis Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 500W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 7000pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 250nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 430 mOhm @ 11.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 21A (Tc) |
Drain to Source Voltage (Vdss): | 1000V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
IXFE23N100 is a single, laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET). It is a voltage-controlled field-effect transistor is used in the industrial and automotive industries due to the features of low on-state resistance, high power handling and ruggedness. This device should be used for operating frequencies up to 1 MHz and for voltage ratings up to 200V.
The IXFE23N100 LDMOSFET is made up of three regions, a source, a drain, and a gate. Each region is connected together by semiconductor material, which allows the device to change its characteristics depending on the gate voltage. An insulated gate voltage is applied to the gate region, and this gate voltage controls the current which flows from the source to the drain.
The working principle behind the IXFE23N100 is that the gate voltage will control the current flowing through the semiconductor material. The current passing through the semiconductor material will be proportional to the gate voltage applied; the greater the gate voltage, the greater the current. When the gate voltage increases, the current passing through the LDMOSFET will increase. This is because the gate voltage modifies the electrical properties of the semiconductor material, allowing more current to pass through the device.
The working principle behind the IXFE23N100 is based on the MOSFET. The MOSFET is a voltage-driven current-controlled device that involves a thin metallic gate dielectric positioned between an n-doped and a p-doped semiconductor layer. By applying a gate voltage, a channel is created in the n-doped semiconductor that allows current to flow from the source to the drain. The current flow will then follow the applied gate voltage and increases as the voltage increases.
The IXFE23N100 is ideal for use in a variety of applications, including high-frequency switching, power conversion, audio power amplifiers, motor controllers and power supplies. The IXFE23N100 is capable of providing high current output, high bandwith and low on-resistance. It also features a high breakdown voltage and excellent switching characteristics. The IXFE23N100 is also highly reliable and can be used in operating temperature ranges up to 75°C.
The IXFE23N100 is an important component in many industrial and automotive applications. It is well suited to power conversion, high-frequency switching and audio power amplifiers. It is also used to control motor speed during operation. Additionally, the IXFE23N100 can be used in power supplies due to its low on-resistance and high current output. The IXFE23N100 is a versatile component with excellent performance and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
IXFE36N100 | IXYS | 31.93 $ | 1000 | MOSFET N-CH 1000V 33A ISO... |
IXFE23N100 | IXYS | 23.28 $ | 1000 | MOSFET N-CH 1000V 21A ISO... |
IXFE24N100 | IXYS | 18.52 $ | 1000 | MOSFET N-CH 1000V 22A ISO... |
IXFE44N50Q | IXYS | 12.93 $ | 1000 | MOSFET N-CH 500V 39A SOT-... |
IXFE48N50QD3 | IXYS | 22.82 $ | 1000 | MOSFET N-CH 500V 41A SOT-... |
IXFE180N20 | IXYS | 25.24 $ | 1000 | MOSFET N-CH 200V 158A ISO... |
IXFE44N50QD3 | IXYS | 23.12 $ | 1000 | MOSFET N-CH 500V 39A SOT-... |
IXFE180N10 | IXYS | 0.0 $ | 1000 | MOSFET N-CH 100V 176A ISO... |
IXFE44N50QD2 | IXYS | 23.12 $ | 1000 | MOSFET N-CH 500V 39A SOT-... |
IXFE48N50Q | IXYS | 12.74 $ | 1000 | MOSFET N-CH 500V 41A SOT-... |
IXFE34N100 | IXYS | 24.74 $ | 1000 | MOSFET N-CH 1000V 30A ISO... |
IXFE44N60 | IXYS | 17.12 $ | 1000 | MOSFET N-CH 600V 41A SOT-... |
IXFE73N30Q | IXYS | 14.85 $ | 1000 | MOSFET N-CH 300V 66A SOT-... |
IXFE50N50 | IXYS | 16.7 $ | 1000 | MOSFET N-CH 500V 50A SOT-... |
IXFE48N50QD2 | IXYS | 22.82 $ | 1000 | MOSFET N-CH 500V 41A SOT-... |
IXFE55N50 | IXYS | 17.17 $ | 1000 | MOSFET N-CH 500V 47A SOT-... |
IXFE80N50 | IXYS | 25.92 $ | 1000 | MOSFET N-CH 500V 72A SOT-... |
IXFE39N90 | IXYS | 34.23 $ | 1000 | MOSFET N-CH 900V 34A ISOP... |
MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

MOSFET N-CH 800V 14A TO-247N-Channel 800...

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

MOSFET N-CH 200V 72A TO-268N-Channel 200...

MOSFET N-CH 800V 9A TO-268N-Channel 800V...
