| Allicdata Part #: | IXFE55N50-ND |
| Manufacturer Part#: |
IXFE55N50 |
| Price: | $ 17.17 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 47A SOT-227B |
| More Detail: | N-Channel 500V 47A (Tc) 500W (Tc) Chassis Mount SO... |
| DataSheet: | IXFE55N50 Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 15.60640 |
| Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 500W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9400pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 27.5A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 47A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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.The IXFE55N50 is an enhancement mode, insulated gate field effect transistor (IGFET) which falls under the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) category of transistors. It is a single polarity MOSFET, meaning that it only works with that one type of voltage polarity. This makes it relatively easy to use and ideal for a wide variety of circuit design applications. So, what exactly makes it so special and how does it work?
At its most basic level, the IXFE55N50 is a type of switch. When triggered, it will allow the flow of current. It is rated at 55V with an RDS on of 8.3mΩ and a maximum current rating of 19A. It is a N-channel transistor, so when it is triggered, it will turn on allowing current to flow. This makes it ideal for circuit design applications where a reliable switch is needed. It is also capable of switching quickly and can be turned on and off in a matter of milliseconds.
The IXFE55N50 works by taking advantage of the electric field across the MOSFET. When voltage is applied to the drain, it creates an electric field between the drain and the source. This electric field is then directed towards the gate which induces the MOSFET to switch on. The drain-source electric field then acts as an amplifier, creating a stronger current flow from the drain to the source. This is how the IXFE55N50 is able to control the current flow by switching on and off at a very fast rate.
The IXFE55N50 is designed for use in a variety of applications such as power supplies, audio amplifiers, DC-DC converters and many other circuit design applications. It is also capable of switching at very high frequencies, making it ideal for use in switched mode power supplies and audio amplifiers which require high switching speeds. It is also capable of higher temperature operating capabilities, making it suitable for applications where there is an increased risk of thermal runaway.
Overall, the IXFE55N50 MOSFET is an ideal choice for a variety of circuit design applications. It is capable of switching quickly and at high frequencies, making it suitable for switched mode power supplies and audio amplifiers which require high switching speeds. It is also rated at 55V with an RDS on of 8.3mΩ and a maximum current rating of 19A, making it suitable for applications where higher temperatures are possible. With its numerous advantages, the IXFE55N50 is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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IXFE55N50 Datasheet/PDF