| Allicdata Part #: | IXFE80N50-ND |
| Manufacturer Part#: |
IXFE80N50 |
| Price: | $ 25.92 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | IXYS |
| Short Description: | MOSFET N-CH 500V 72A SOT-227B |
| More Detail: | N-Channel 500V 72A (Tc) 580W (Tc) Chassis Mount SO... |
| DataSheet: | IXFE80N50 Datasheet/PDF |
| Quantity: | 1000 |
| 10 +: | $ 23.56390 |
| Vgs(th) (Max) @ Id: | 4.5V @ 8mA |
| Package / Case: | SOT-227-4, miniBLOC |
| Supplier Device Package: | SOT-227B |
| Mounting Type: | Chassis Mount |
| Operating Temperature: | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 580W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 9890pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 380nC @ 10V |
| Series: | HiPerFET™ |
| Rds On (Max) @ Id, Vgs: | 55 mOhm @ 40A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 72A (Tc) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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IXFE80N50 is a power device from Infineon, it is a n-channel enhancement mode MOSFET, which is typically used for a variety of applications, including AC and DC switching, automotive powertrain, power management and other power control applications.
The IXFE80N50 is constructed as an N-type MOSFET, meaning that it uses an N-type channel to carry current. It is an enhancement mode MOSFET, which means that it has an \'on\' and \'off\' state, and the gate must be driven with a positive voltage to turn it \'on\'. The main applications of this MOSFET are switchmode power supply circuits, motor drive circuits, and power management circuits.
Working Principle
The IXFE80N50 is an enhancement mode MOSFET, meaning that current can only flow when the gate voltage is more positive than the source. When the gate is at the same voltage as the source, the MOSFET is in its \'off\' state, no current can flow, and the device will appear to be an open circuit. If a positive voltage is applied to the gate, the current will start to flow, and the MOSFET will appear to be a closed circuit. The more positive the gate voltage is, the more current can flow through the device.
The IXFE80N50 is designed for switching applications, meaning that it can be used to quickly turn on and off power to a load. This makes it ideal for controlling the power flow to motors, lights, and other loads. The IXFE80N50 is capable of handling up to 80A of current and features a modulation speed of up to 5ns. These features make it well-suited for high-frequency power control applications.
The IXFE80N50 also features an ultra low on-resistance of 8mΩ, making it ideal for applications that require minimal power dissipation. It is also capable of dissipation up to 850W, making it suitable for high-power applications.
In sum, the IXFE80N50 is an ideal power device for high-power, high-frequency switching applications. Its ultra-low on-resistance, high current handling capability, and fast modulation rate make it suited for a variety of power control applications.
The specific data is subject to PDF, and the above content is for reference
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IXFE80N50 Datasheet/PDF