IXFE36N100 Allicdata Electronics
Allicdata Part #:

IXFE36N100-ND

Manufacturer Part#:

IXFE36N100

Price: $ 31.93
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 1000V 33A ISOPLUS227
More Detail: N-Channel 1000V 33A (Tc) 580W (Tc) Chassis Mount S...
DataSheet: IXFE36N100 datasheetIXFE36N100 Datasheet/PDF
Quantity: 1000
10 +: $ 29.02410
Stock 1000Can Ship Immediately
$ 31.93
Specifications
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227B
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 580W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 15000pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 455nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 240 mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The IXFE36N100 is a part of a family of field effect transistors (FETs) that includes several models with varying voltage and current ratings. This particular model is often found in power supply, motor control, inverter, and other device applications that must be able to handle large amounts of power in a small, efficient package.

The IXFE36N100 is a single field effect transistor that is constructed of a silicon dioxide material. This type of construction reduces the amount of power that is lost as it passes through the device as well as improves the overall thermal efficiency.

The working principle behind the IXFE36N100 is similar to other FETs although it does offer certain special features. Like other FETs, the IXFE36N100 is operated by applying a voltage to its gate. This voltage is used to control the amount of current that is allowed to pass through it. When the correct amount of gate voltage is applied, the IXFE36N100 will switch on and allow the current to flow.

One of the key features of this device is its ability to handle large amounts of power without overheating. This is because of its high current capacity, which allows it to stay within its rated parameters and maintain a high level of efficiency. Additionally, the IXFE36N100 is a low-noise device, meaning it will not generate any unwanted noise or interference when in use.

Another important feature of the IXFE36N100 is its resistance to reverse voltage. This means that the device is capable of withstanding the high levels of current that it is expected to handle without damaging the chip or components. This makes the IXFE36N100 a valuable part of any system that requires reliable operation over a long period of time.

In terms of application fields, the IXFE36N100 is often found in a variety of power supply, motor control, inverter and other similar applications. Its ability to handle a large amount of power in a small package make it ideal for such applications. Additionally, the IXFE36N100 can also be used in automotive, industrial and communications applications as needed.

The IXFE36N100 is a powerful and reliable single FET that is suitable for a variety of applications. Its high current capacity, low noise operation, and reverse voltage protection make it a valuable addition to any device that requires the processing of large amounts of power. The IXFE36N100 is a versatile device that can be found in various system types, including power supply, motor control, inverter and other similar applications.

The specific data is subject to PDF, and the above content is for reference

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