IXFJ15N100Q

Series:	*
Part Status:	Obsolete

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IXFJ15N100Q is a high-performance Fast Intrinsic Diode (FID) MOSFET that is suitable for high power applications. This device is an ideal alternative to traditional Fast Recovery Diodes (FRD), and offers superior performance, reliability and cost. It has a low gate-to-source capacitance and low forward voltage drop, making it ideal for high frequency applications.The working principle of IXFJ15N100Q MOSFET is based on the principle of field effect transistor. This type of transistor consists of three terminals: source, drain, and gate. By applying a voltage to the gate, a current can be allowed to flow between the source and drain terminals. The voltage at the gate is used to regulate the current flow. The MOSFET has a voltage to current signal transfer ratio that is much higher than a traditional bipolar junction transistor (BJT).The IXFJ15N100Q MOSFET is suitable for applications such as switching, low voltage operation and high voltage operation. It is suitable for circuits which are used in environments with high switching speed, such as in communication systems, and switching applications requiring high speed operation. The device’s high speed operation allows for faster and more efficient switching, allowing for increased system performance.This device also has a low gate-to-source capacitance, making it ideal for high frequency applications. It is also suitable for applications that require high voltage switching. The device is ideal for applications such as inverters, DC power supplies, motor controllers, and other power supply circuits. The device has a high input impedance and can withstand high voltages.The IXFJ15N100Q MOSFET also has an inherent fast-recovery diode placed inside its die. This diode ensures that the device is protected against short circuit conditions, even at high switching frequencies. It has a high dv/dt immunity and can tolerate high spikes in voltage, making it suitable for applications that operate in harsh environments.The device also has a low On-state resistance, which provides higher efficiency in switching applications. The device also has thermally overload protection that allows it to operate continuously while dissipating heat. The device has an efficient heat sink that can help the device dissipate heat. The device also has built-in ESD protection that helps protect its internal circuits from damage due to Electro-Static Discharge (ESD).Overall, the IXFJ15N100Q MOSFET is a superior high-power Fast Intrinsic Diode (FID) MOSFET capable of providing superior performance, reliability and cost. It is suitable for applications such as DC power supplies and low voltage operation, as well as high voltage switching and high speed applications. The device has high input impedance and low gate-to-source capacitance for high frequency applications, an inherent fast-recovery diode, thermally overload protection, and electro-static protection. By combining all these features, the device not only provides superior performance, but also enhanced reliability, making it an ideal choice for applications requiring high performance and reliable operation.

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