IXFJ80N25X3

Vgs(th) (Max) @ Id:	4.5V @ 1.5mA
Package / Case:	TO-247-3
Supplier Device Package:	ISO TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	104W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	5430pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	83nC @ 10V
Series:	HiPerFET™
Rds On (Max) @ Id, Vgs:	18 mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	44A (Tc)
Drain to Source Voltage (Vdss):	250V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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This article aims to introduce the IXFJ80N25X3 Transistor, particularly in its application field and working principle. The IXFJ80N25X3 is a fast, low voltage field effect transistor (FET) designed to replace N- and P-channel MOSFETs, as well as bipolars, in certain applications. It is fully compatible with the standard JEDEC (Joint Electron Device Engineering Council) TO-252 package. The IXFJ80N25X3 is specifically designed for use in a variety of high performance, miniature and power switching applications. The IXFJ80N25X3 features a low voltage drive, fast switching times, and excellent thermal stability, making it ideal for use in today\'s high-speed and high-current systems. The IXFJ80N25X3 is rated for up to 25A of continuous current and can handle up to 50A of peak current. This makes it well suited for DC-DC converters, motor controls, and other high-current switching applications. The IXFJ80N25X3 has an avalanching safe operating area (AOSA) of 650V. This means it has excellent voltage and current handling capabilities, making it a good choice for applications where high currents and high voltages are common.In addition to its high current handling capabilities, the IXFJ80N25X3 also has a low on-state resistance (rDS(on)) of only 50 milliohms. This low on-state resistance allows it to quickly switch between on and off states, resulting in faster switching times. The IXFJ80N25X3 also features a low gate charge (Qg), which is the total amount of energy required to change the transistor from its off-state to its on-state. A low gate charge eliminates power loss, resulting in better efficiency and higher performance.So how does the IXFJ80N25X3 work? In simple terms, it is basically a field effect transistor (FET). FETs consist of a conducting channel between two terminals that is protected by an extremely thin layer of insulating material, called a gate. When a voltage is applied to the gate, it changes the conductivity of the channel, allowing current to flow. This is what makes FETs so useful for high-speed switching applications. When the gate voltage is low, current flows through the channel, creating a flow of electrons known as a drain-source current. The magnitude of this current is determined by the resistance of the channel and the applied gate voltage. When the gate voltage is set to a higher level, the channel resistance increases and the current flow is suppressed. This is known as depletion-mode operation, and is what makes FETs so useful for high-current applications.The IXFJ80N25X3 also features protection against voltage transients due to its built-in protection diodes. These diodes limit the peak voltage applied to the drain during momentary events such as switching faults or short circuits. This helps ensure that the transistor remains in its off-state during these events, reducing the risk of damage to the component or system.In summary, the IXFJ80N25X3 is a versatile and reliable transistor designed for high current, high voltage and fast switching applications. It features low on-state resistance, low gate charge, low voltage drive, fast switching times and protection against voltage transients. Its compatibility with the standard JEDEC TO-252 package makes it convenient for manufacturers and engineers to employ it in their designs.

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