
Allicdata Part #: | IXFJ40N30-ND |
Manufacturer Part#: |
IXFJ40N30 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | MOSFET N-CH 300V 40A TO-220 |
More Detail: | N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 4mA |
Package / Case: | TO-220-3, Short Tab |
Supplier Device Package: | TO-268 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 300W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4800pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 200nC @ 10V |
Series: | HiPerFET™ |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 40A (Tc) |
Drain to Source Voltage (Vdss): | 300V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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IXFJ40N30 is a field-effect transistor (FET) and is part of the family of metal-oxide-semiconductor FETs (MOSFETs). This transistor is a type of single linked device – meaning it has only one source terminal connected to the main body of the transistor (the substrate). It is designed for use in high-power applications such as in industrial systems and consumer electronics.
The IXFJ40N30 works by modulating the current that flows between source and drain in the transistor by adjusting the voltage applied to the gate terminal. This makes it an ideal choice for applications requiring control of current flow with high-precision. For example, IXFJ40N30 has been used in applications such as power converters, radio frequency amplifiers and power supply circuits.
The IXFJ40N30 is a three-terminal device with the source (S), drain (D) and gate (G) terminals. It has a type-8 package meaning that all three of these terminals are connected to each other with the substrate material. The gate terminal is connected to the body of the transistor by an insulated gate material which makes it suitable for using in areas where high-level insulation is required.
The IXFJ40N30 can handle very high levels of current which makes it suitable for use in power supply circuits and power converters. It has a low on-state resistance (RDS) which allows for good power efficiency when in operation. This means that the IXFJ40N30 can provide a great deal of power for its size.
The IXFJ40N30 also has high-speed switching characteristics which makes it suitable for very high frequency applications. It is capable of switching on and off at speeds of up to 5ms which makes it suitable for use in high-speed switching applications such as radio frequency amplifiers.
IXFJ40N30 also features very low gate-source capacitance which helps to reduce switching losses. This feature makes it an ideal choice for use in applications where reduced power losses are desired. The low gate-source capacitance also results in low switching times, making it an ideal choice for high-speed switching applications.
The IXFJ40N30 is also very reliable and has a long lifetime which makes it suitable for use in applications where high-reliability is desired. The device is also highly robust and can withstand extreme temperatures, which makes it suitable for use in industrial applications.
In summary, the IXFJ40N30 is an excellent choice for use in high-power applications requiring control of current flow with high-precision. Its high currents handling capabilities, low gate-source capacitance, and high-speed switching capability to make it an ideal choice for use in various applications. It is also highly reliable, robust and has a long lifetime which makes it suitable for use in industrial and consumer applications.
The specific data is subject to PDF, and the above content is for reference
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