IXFJ40N30 Allicdata Electronics
Allicdata Part #:

IXFJ40N30-ND

Manufacturer Part#:

IXFJ40N30

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: MOSFET N-CH 300V 40A TO-220
More Detail: N-Channel 300V 40A (Tc) 300W (Tc) Through Hole TO-...
DataSheet: IXFJ40N30 datasheetIXFJ40N30 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 4mA
Package / Case: TO-220-3, Short Tab
Supplier Device Package: TO-268
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 300W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Series: HiPerFET™
Rds On (Max) @ Id, Vgs: 80 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 300V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

IXFJ40N30 is a field-effect transistor (FET) and is part of the family of metal-oxide-semiconductor FETs (MOSFETs). This transistor is a type of single linked device – meaning it has only one source terminal connected to the main body of the transistor (the substrate). It is designed for use in high-power applications such as in industrial systems and consumer electronics.

The IXFJ40N30 works by modulating the current that flows between source and drain in the transistor by adjusting the voltage applied to the gate terminal. This makes it an ideal choice for applications requiring control of current flow with high-precision. For example, IXFJ40N30 has been used in applications such as power converters, radio frequency amplifiers and power supply circuits.

The IXFJ40N30 is a three-terminal device with the source (S), drain (D) and gate (G) terminals. It has a type-8 package meaning that all three of these terminals are connected to each other with the substrate material. The gate terminal is connected to the body of the transistor by an insulated gate material which makes it suitable for using in areas where high-level insulation is required.

The IXFJ40N30 can handle very high levels of current which makes it suitable for use in power supply circuits and power converters. It has a low on-state resistance (RDS) which allows for good power efficiency when in operation. This means that the IXFJ40N30 can provide a great deal of power for its size.

The IXFJ40N30 also has high-speed switching characteristics which makes it suitable for very high frequency applications. It is capable of switching on and off at speeds of up to 5ms which makes it suitable for use in high-speed switching applications such as radio frequency amplifiers.

IXFJ40N30 also features very low gate-source capacitance which helps to reduce switching losses. This feature makes it an ideal choice for use in applications where reduced power losses are desired. The low gate-source capacitance also results in low switching times, making it an ideal choice for high-speed switching applications.

The IXFJ40N30 is also very reliable and has a long lifetime which makes it suitable for use in applications where high-reliability is desired. The device is also highly robust and can withstand extreme temperatures, which makes it suitable for use in industrial applications.

In summary, the IXFJ40N30 is an excellent choice for use in high-power applications requiring control of current flow with high-precision. Its high currents handling capabilities, low gate-source capacitance, and high-speed switching capability to make it an ideal choice for use in various applications. It is also highly reliable, robust and has a long lifetime which makes it suitable for use in industrial and consumer applications.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "IXFJ" Included word is 11
Part Number Manufacturer Price Quantity Description
IXFJ52N30Q IXYS 0.0 $ 1000 MOSFET N-CH TO-220
IXFJ15N100Q IXYS 0.0 $ 1000 MOSFET N-CH TO-220
IXFJ80N20Q IXYS 0.0 $ 1000 MOSFET N-CH TO-220
IXFJ32N50 IXYS 0.0 $ 1000 MOSFET N-CH TO-220
IXFJ40N30 IXYS 0.0 $ 1000 MOSFET N-CH 300V 40A TO-2...
IXFJ40N30Q IXYS 0.0 $ 1000 MOSFET N-CHANNEL 300V 40A...
IXFJ80N25X3 IXYS 8.06 $ 30 MOSFET N-CH 250V 44A TO24...
IXFJ20N85X IXYS 7.43 $ 18 MOSFET N-CH 850V 9.5A TO2...
IXFJ26N50P3 IXYS 4.98 $ 7590 MOSFET N-CH 500V 14A TO22...
IXFJ32N50Q IXYS 0.0 $ 1000 MOSFET N-CH 500V 32A TO-2...
IXFJ80N10Q IXYS 0.0 $ 1000 MOSFET N-CH TO-220
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics