IXFJ20N85X

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IXFJ20N85X Application Field and Working Principle

IXFJ20N85X is one of the single FET type field-effect transistors (FETs) made by Ixys Corporation. In this article, we will look at IXFJ20N85X’s application scope and its working principle.

IXFJ20N85X Application Field

IXFJ20N85X is a N-channel MOSFET, suitable for use in several applications, including high- and low-voltage switching, and power amplifying. This device is also often used in circuits that require high speed switching operations, such as portable electronic devices (PDAs, digital cameras, portable phones etc.) and computers, as well as any type of digital circuit where very high switching frequencies are required.

It is also suitable for higher switching frequency converters that require the combination of very low on-resistance, low gate charge and high breakdown voltage. In addition, IXFJ20N85X could be used in motor drives, high-density switching supplies, etc.

IXFJ20N85X Basic Working Principle

A FET is a three-terminal semiconductor device that works like a voltage-controlled switch. It consists of three terminals: drain, source, and gate. The source terminal is connected to ground and the drain terminal is connected to the device that needs to be powered. The gate terminal is connected to a voltage signal that controls the switch’s action.

IXFJ20N85X is an N-type FET, which means it works on the principle of negative feedback. In this type of FET, the operation is based on the application of a negative voltage signal to the gate terminal. The negative voltage attracts electrons in the channel between the source and drain terminal, and the current in the device increases.

At the same time, the voltage drops across the device, resulting in an increase in the resistance between the source and drain terminals. This process is known as pinch-off or saturation, and it can be used to control the current in the device.

IXFJ20N85X uses a special gate electrode called an insulated gate electrode (IGE) which is made from a special semiconductor material to further improve the device’s performance. This material has a much higher resistance to leakage current and is also resistant to heat. This combination of features makes IXFJ20N85X an ideal choice for performing high-speed switching operations.

Conclusion

IXFJ20N85X is one of the single FET type field-effect transistors (FETs) made by Ixys Corporation. It has a wide range of applications, including high- and low-voltage switching, and power amplifying, as well as any type of digital circuit requiring very high switching frequencies. It works on the principle of negative feedback, using a special gate electrode to improve the device’s performance. IXFJ20N85X is an ideal choice for performing high-speed switching operations.

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