IXGQ120N30TCD1 Allicdata Electronics
Allicdata Part #:

IXGQ120N30TCD1-ND

Manufacturer Part#:

IXGQ120N30TCD1

Price: $ 3.88
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 300V 120A TO3P
More Detail: IGBT Trench 300V 120A Through Hole TO-3P
DataSheet: IXGQ120N30TCD1 datasheetIXGQ120N30TCD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 3.52590
Stock 1000Can Ship Immediately
$ 3.88
Specifications
Switching Energy: --
Base Part Number: IXG*120N30
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: --
Test Condition: --
Td (on/off) @ 25°C: --
Input Type: Standard
Series: --
Vce(on) (Max) @ Vge, Ic: --
Current - Collector (Ic) (Max): 120A
Voltage - Collector Emitter Breakdown (Max): 300V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGQ120N30TCD1 Application Field and Working Principle

The IXGQ120N30TCD1 is a planar IGBT with trench gate, and belongs to the family of Advanced Power MOSFETs. It is characterized by low VCEsat (Bsat) and low gate charge, with adjustable switching frequency from the fastest commercial IGBT. Developed with the latest high voltage process technology, the IXGQ120N30TCD1 is ideal for low frequency switching applications requiring low stray inductance associated with conventional discrete IGBTs.

Application Field

The IXGQ120N30TCD1 IGBT is suitable for a broad range of applications in the areas of power supplies, renewable energy, and industrial motor drives. Some of the areas this IGBT can be applied to include power factor correction, active front-end power supplies, uninterruptible power supplies and HVDC motor control.

Working Principle

The IXGQ120N30TCD1 is based on the working principle of an insulated-gate bipolar transistor (IGBT). This particular device, like all IGBTs, is a cross between a MOSFET and a bipolar junction transistor. The gate terminal is insulated from the source and drain by a thin gate oxide layer. A positive voltage applied to the gate of the IXGQ120N30TCD1 causes a current to flow between the source and drain through the body region. This current flow is what is known as Transistor Action – the ability of the transistor to act as both an “on” and “off” switch. The amount of current that can flow through the IXGQ120N30TCD1 depends on the voltage applied to the gate and the amount of bias current injected. Since the IXGQ120N30TCD1 has a low level of leakages, its on-to-off resistance is much higher than that of an equivalent MOSFET.

Conclusion

The IXGQ120N30TCD1 is an advanced planar IGBT with low VCEsat (Bsat) and low gate charge which makes it the ideal device for low frequency switching applications. Its working principle is based on an insulated-gate bipolar transistor which allows the device to act as both an “on” and “off” switch. The IXGQ120N30TCD1 is suitable for a broad range of applications in the areas of power supplies, renewable energy and industrial motor drives.

The specific data is subject to PDF, and the above content is for reference

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