IXGQ180N33TCD1 Allicdata Electronics

IXGQ180N33TCD1 Discrete Semiconductor Products

Allicdata Part #:

IXGQ180N33TCD1-ND

Manufacturer Part#:

IXGQ180N33TCD1

Price: $ 5.12
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 330V 180A TO3P
More Detail: IGBT 330V 180A Through Hole TO-3P
DataSheet: IXGQ180N33TCD1 datasheetIXGQ180N33TCD1 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 5.12000
10 +: $ 4.96640
100 +: $ 4.86400
1000 +: $ 4.76160
10000 +: $ 4.60800
Stock 1000Can Ship Immediately
$ 5.12
Specifications
Vce(on) (Max) @ Vge, Ic: --
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: --
Test Condition: --
Td (on/off) @ 25°C: --
Input Type: Standard
Switching Energy: --
Series: --
Current - Collector (Ic) (Max): 180A
Voltage - Collector Emitter Breakdown (Max): 330V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IXGQ180N33TCD1 is a type of insulated-gate bipolar transistor (IGBT), which belongs to the single IGBTs family. It is commonly used in converters, uninterruptible power supplies (UPS), motor drives, frequency drives and other switching applications. In addition, IXGQ180N33TCD1 can offer a balance of performance and cost benefits, making it popular in multiple industrial applications.

In terms of its structure, IXGQ180N33TCD1 employs a monolithic, 4-layer vertical structure. This particular type of IGBT integrates a highly reliable trench gate structure, together with a low on-state voltage drop (VCE(sat)) and a low gate charge (Qg). The device also permits higher efficiency and better temperature dependence performance compared to standard discrete IGBTs. The remarkable trench gate structure used by IXGQ180N33TCD1 enables fast switching speed and improved di/dt capability. In addition, it is also equipped with a high current density and improved manufacturability.

As for the electrical characteristics of the IXGQ180N33TCD1, it has a drain current rating of 5.6A, a collector cutoff current rating of 1mA, and a collector open voltage of 800 V. Its peak forward-gate current is rated at 2.5A. The IXGQ180N33TCD1\'s thermal resistance (50-50 junction temperature and case temperature) is rated at 1.9°C/W.

The working principle of IXGQ180N33TCD1 can be explained in simple terms as follows. The device operates by combining the electrical characteristics of a voltage-controlled field-effect transistor (FET) and a current-controlled bipolar transistor (BJT). When it is properly powered, the collector-emitter current can be conducted through the device. This current is regulated by the voltage applied to its gate terminal, which controls the flow of current between the collector and emitter. The output of the device is inversely proportional to the input, in that a decrease in the gate voltage will increase the flow of current.

The IXGQ180N33TCD1 is suitable for a wide range of industrial applications. It can be used in motor drives, converters, uninterruptible power supplies, frequency drives, motor control and other switching applications. Additionally, it is also commonly used in household appliances, such as air conditioners, refrigerators, washing machines and televisions.

The IXGQ180N33TCD1 is a reliable, efficient, and cost-effective IGBT solution for a wide range of applications. It is highly resistant to thermal runaway and has improved manufacturability. Moreover, the device has exceptional switching speed and resonance performance, which makes it a popular choice in industrial, consumer and other electrical applications.

The specific data is subject to PDF, and the above content is for reference

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