IXGQ170N30PB Allicdata Electronics
Allicdata Part #:

IXGQ170N30PB-ND

Manufacturer Part#:

IXGQ170N30PB

Price: $ 1.88
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 300V 170A 330W TO3P
More Detail: IGBT 300V 170A 330W Through Hole TO-3P
DataSheet: IXGQ170N30PB datasheetIXGQ170N30PB Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
30 +: $ 1.71171
Stock 1000Can Ship Immediately
$ 1.88
Specifications
Power - Max: 330W
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Test Condition: --
Td (on/off) @ 25°C: --
Gate Charge: 143nC
Input Type: Standard
Switching Energy: --
Series: Polar™
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A
Current - Collector (Ic) (Max): 170A
Voltage - Collector Emitter Breakdown (Max): 300V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The IXGQ170N30PB is a high-performance IGBT device with single-chip integration. It integrates an IGBT field effect transistor (FET) and a free-wheeling freewheel diode (schottky) in one device, which is simpler and faster than the traditional discrete IGBT module.

This IGBT offers excellent performance parameters and features, including voltage rating up to 1700V, current rating up to 300A and losses at high frequency. It also features a built-in overvoltage protection circuit, fast switching speed, and a low gate drive voltage, which gives it greater efficiency than other IGBTs. Additionally, it has a built-in temperature sensing device and an isolation layer that helps stock its stable operation.

The IXGQ170N30PB can be used in a variety of applications such as power supplies, motor drives, and HVAC systems. In particular, the IGBT is well-suited for use in switch-mode power supplies and laser applications, as well as low-power inverters, AC voltage controllers and high-power motor drives. The IXGQ170N30PB is also well-suited for use in welding and high-power lighting applications. It can also be used in high-frequency switching operations, such as for switching power converters and high-efficiency inverters.

The IXGQ170N30PB\'s working principle is the same as other IGBTs, in that it operates in the same way as a traditional MOSFET. This type of transistor is formed by combining an FET and a diode in a single package. An applied voltage on the gate produces a current flow between the collector and emitter electrodes, which is then converted into high frequency pulses at the output. The pulses can then be regulated and used to power electrical systems. The high switching speed of this IGBT makes it ideal for use in high frequency applications. Additionally, its low gate drive voltage allows for energy saving operations at the same power levels.

In conclusion, the IXGQ170N30PB is a high performance IGBT device that offers excellent performance parameters and features. It is suitable for a variety of applications such as switch-mode power supplies, high-power motor drives, and high-frequency switching operations. Moreover, its low gate drive voltage and built-in overvoltage protection circuit make it an ideal solution for energy efficient and reliable operations. Furthermore, its built-in temperature sensing device and isolation layer help it to maintain a stable operation.

The specific data is subject to PDF, and the above content is for reference

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