IXGQ35N120BD1 Discrete Semiconductor Products

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The IXGQ35N120BD1 is a single, state-of-the-art, insulated gate bipolar transistor (IGBT). It is part of Mitsubishi Electric’s GenX power semiconductor family, a series of advanced, low-loss components specifically designed to reduce system-level costs and improve overall efficiency. This product has a wide range of applications, including static induction and static convergence machines, solar energy systems, and ultra-high-speed switching.

Applications

The IXGQ35N120BD1 is a versatile component that can be used to replace power MOSFETs, bipolar transistors, and thyristors in many applications. Its ultra-low conduction losses, compact design, and efficient switching ability make it suitable for use in high-reliability, high-efficiency systems. Its features make it well-suited for motor control, power supplies, renewable energy systems, and automotive systems, including those that require high-speed switching and operational reliability.

The IXGQ35N120BD1 is a high-performance component that is suitable for use in a variety of applications. It is capable of operating as low as 0.9V and can support a load current of up to 20A. In addition, it is capable of providing a high degree of gate drive current, which allows it to switch very quickly. This allows it to be used in high-speed, high-performance systems.

The IXGQ35N120BD1 is also well-suited for use in variable speed drive systems. It supports variable voltage input, which allows the power supply to be adjusted to the appropriate level for each application. Additionally, its low switching losses enable it to comply with the most stringent efficiency criteria. Finally, its advanced protection features make it suitable for use in harsh environments.

Working Principle

The IXGQ35N120BD1 is based on the principle of insulated gate bipolar transistors (IGBTs). It is composed of two distinct terminals; the collector, which carries positive current, and the emitter, which carries negative current. An insulated gate sits between these two terminals, serving as a control mechanism. When the gate voltage is positive, current passes through the collector-emitter junction and the transistor is in the “ON” state.

When the gate voltage is negative, the transistor is in the “OFF” state and no current can pass through the collector-emitter junction. To control the current flow through the IXGQ35N120BD1, the gate voltage can be adjusted, similar to a switch. This makes the component very useful as a power switch which can be used to control the current and voltage in an application.

Overall, the IXGQ35N120BD1 is a powerful and efficient component that can be used for a variety of applications. Its efficient switching ability, low conduction losses, and advanced protection features make it an excellent choice for high-power, high-speed systems and environments that require reliable operation.

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