IXGQ50N60C4D1

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXGQ50N60C4D1 is a high voltage field-stop IGBT which uses a copper clip bonding configuration to reduce on-state voltage drop. It is part of the IXGT range of IGBT modules, which are also available as dual devices. In addition to the higher efficiency and power density that comes with Copper Plus technology, the IXGT range also has lower package stresses, faster switching speeds and a higher system cost savings.

The IXGQ50N60C4D1 single device is typically applied in motor drives, welding, telecommunications, energy generation and more. It offers excellent performances even in the most demanding applications with fast switching, controlled turn-on behavior, reduced noise and high efficiency.

The IXGQ50N60C4D1 uses insulated gate bipolar transistor (IGBT) technology to provide improved gate charge, high frequency performance and dv/dt capability. It is designed to provide a combination of high voltage, high speed and fast recovery performance, allowing for improved system design flexibility and lower total system cost. The device features a turn-on voltage of -14V, a turn-on current of 4.2A and a turn-off time of less than 3µs.

The IXGQ50N60C4D1 has a conduction mode of 1200V and a drain-to-source voltage rating of 800V. Its maximum gate emitter voltage rating is 11.5V and its maximum operating junction temperature rating is 175°C. The device is capable of carrying a high current of 50A at a low switching energy loss of 13.8mJ. It has a maximum surge current capability of 60A and a maximum peak voltage rating of 1200V. The typical switching speed of the IXGQ50N60C4D1 is 20khz.

The IXGQ50N60C4D1 has a variety of protection and diagnostic features. It is built with over-temperature protection, over-voltage protection and current limit protection. It also has electro-magnetic interference noise suppressor and a gate charge monitor. Additionally, the device is designed with an integrated diagnostic system, which provides data and feedback on the status of the device.

The operating principle of the IXGQ50N60C4D1 involves the use of thermal energy generated by the dissipation of electrical power when the device is turned on. This energy is used to control the movement of carriers within the semiconductor material, allowing current to flow or blocking current as needed. The device is able to modulate the amount of current allowed to flow through it, providing excellent flexibility in the design of power electronics systems.

In a nutshell, the IXGQ50N60C4D1 is a high voltage, single-device IGBT with high current and low switching energy loss capabilities. It is typically used in motor drives, welding, telecommunications, energy generation and more. Its protection and diagnostic features provide feedback and data on the status of the device, allowing for improved system design flexibility and lower total system cost. Its operating principle involves the use of thermal energy generated by the dissipation of electrical power when the device is turned on.

The specific data is subject to PDF, and the above content is for reference