IXGQ28N120BD1

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IXGQ 28N120BD1 is a single IGBT (Insulated Gate Bipolar Transistor) transistor with rated collector-emitter voltage of 1200V and collector current of 28A. It offers precise control of gate turn-off time and excellent frequency characteristics which is suitable for a wide range of applications. The IXGQ 28N120BD1 is particularly suitable for applications such as high-frequency power supplies, professional audio, automotive power management, and robotics.

The IXGQ 28N120BD1 module is based on a single N-channel IGBT transistor, which is controlled by a gate voltage between 10V and 20V. The current rating for the module is 28A, which is the maximum current it can handle. It also has a high breakdown voltage of 1200V, which makes it suitable for a wide range of applications. The IXGQ 28N120BD1 module also has excellent switching characteristics, with a turn-on transition time of 5us and a turn-off transition time of 12us. This makes the module highly efficient and reliable.

The working principle of the IXGQ 28N120BD1 module is based on the principle of bipolar junction transistor (BJT). The BJT is a voltage controlled current source, and it is constructed of three layers, N-type, P-type, and N-type layers. When the N layer is forward biased, it allows current to flow through it. This causes a voltage drop across the N layer, which in turn leads to a voltage drop across the P layer. When the voltage on the gate of the N layer reaches the turn-on threshold voltage, the current through the transistor increases, and the voltage across the P layer increases to its maximum value. This increases the voltage across the collector and emitter of the transistor. When the voltage on the gate reaches the turn-off threshold voltage, the current through the transistor is reduced, and the collector-emitter voltage decreases to its minimum value.

The IXGQ 28N120BD1 module is suitable for many automotive and consumer applications, such as power supply, switching converters and motor control. It can also be used for power management, particularly for controlling the power for automotive components, such as injectors and spark plugs. The module is also suitable for professional audio and robotics applications, due to the precise control of gate turn-off time and excellent frequency characteristics.

In conclusion, the IXGQ 28N120BD1 is a single IGBT module with rated collector-emitter voltage of 1200V and collector current of 28A. It offers precise control of gate turn-off time and excellent frequency characteristics, which makes it suitable for a wide range of applications, such as automotive power management, professional audio, and robotics. The module works based on the principle of the bipolar junction transistor, and is suitable for various consumer and automotive applications.

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