IXGQ180N33TC

Series:	--
Packaging:	Tube
Part Status:	Obsolete
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	330V
Current - Collector (Ic) (Max):	180A
Vce(on) (Max) @ Vge, Ic:	--
Switching Energy:	--
Input Type:	Standard
Td (on/off) @ 25°C:	--
Test Condition:	--
Operating Temperature:	--
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P

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IXGQ180N33TC Application Field and Working PrincipleThe IXGQ180N33TC is an Insulated Gate Bipolar Transistor (IGBT), a type of power semiconductor that is specifically designed to handle high-current and high-temperature applications. This IGBT, manufactured by Infineon Technologies, has a maximum collector current of 180 A and is rated up to 3300V. It is a popular choice for motor control, uninterruptible power supplies, solar inverters, inverter welders, and other high-current and high-temperature applications.The IXGQ180N33TC is a single IGBT, meaning it consists of one IGBT module, rather than two. It has two pins for controlling the switches, or ‘gates’, and two pins for controlling the current. It has a built-in ‘intelligent power module’, which helps identify port connections and adjust the gate current to match the load current, thus providing better control over the device.The IXGQ180N33TC’s working principle relies on the on and off switching of the two gate pins. When one pin is ‘on’, it allows current to flow from the collector to the emitter. When the other pin is ‘off’, it stops the current from flowing. This switching effect can be used to effectively control the flow of electricity.The IXGQ180N33TC also has a built-in protection circuit. This ensures that any overcurrent or overvoltage conditions are quickly detected, allowing the device to shut down in time to avoid any damage.The IXGQ180N33TC is a reliable, efficient and cost-effective solution for a variety of high-current and high-temperature applications. It can provide accurate control of devices and circuits, and is suitable for a wide range of uses.

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