
Allicdata Part #: | IXGQ96N30TBD1-ND |
Manufacturer Part#: |
IXGQ96N30TBD1 |
Price: | $ 3.88 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT 320V 96A TO3P |
More Detail: | IGBT Trench 320V 96A Through Hole TO-3P |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
30 +: | $ 3.52590 |
Vce(on) (Max) @ Vge, Ic: | -- |
Supplier Device Package: | TO-3P |
Package / Case: | TO-3P-3, SC-65-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -- |
Test Condition: | -- |
Td (on/off) @ 25°C: | -- |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Current - Collector (Ic) (Max): | 96A |
Voltage - Collector Emitter Breakdown (Max): | 320V |
IGBT Type: | Trench |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The IXGQ96N30TBD1 is a type of insulated-gate bipolar-transistor structure (IGBTs), made up of a single N-channel MOS gate and BJT, which has become a hugely popular and widely used electronic component for many industrial and consumer applications. This type of IGBT is known for its moderate switching power performance, affordability, and high current and voltage ratings.
The IXGQ96N30TBD1 is commonly found in motor control, power ratio conversion, and in applications where it is used to switch high currents and/or switch power-ratio conversion. It is also popular for applications where low switching time and ultra-fast switching are needed.
The main principle behind the IXGQ96N30TBD1 IGBT is that it has two channels - one is an N-channel MOSFET and the other is an P-channel MOSFET - and it can switch between them without having to break the current path. In other words, the IGBT acts like a switch, taking the voltage from one channel and using it to switch the current from another. This makes it much faster than a regular MOSFET, because the IGBT doesn’t need to break the current path in order to switch the circuit.
In addition to switching power-ratio conversion, the IXGQ96N30TBD1 IGBT has several other advantages over regular MOSFETs, including greater current and voltage ratings, faster switching times, and better thermal conductivity. This means that it is ideal for more power-intensive applications like DC/DC converters and high frequency AC/DC converters.
The IXGQ96N30TBD1 IGBT also has better noise performance than regular MOSFETs, due to its lower gate leakage current. This means that it is more efficient and can operate at lower temperatures. In addition, it can also be used in devices like switchmode power supplies or high-efficiency inverters. It is also used in automotive power electronics and home appliance controllers.
The IXGQ96N30TBD1 IGBT also has a lower fall times, which means it can switch from one state to another much faster than regular MOSFETs. This makes it ideal for high frequency applications, like switching mode power supplies, inverters and DC/DC converters. In addition, it has excellent noise immunity, making it suitable for applications in the telecommunications industry.
Overall, the IXGQ96N30TBD1 IGBT is a great choice for applications where fast switching times and high current and voltage ratings are required. Its features make it ideal for applications such as motor control, power ratio conversion, DC/DC converters, and in automotive electronics. Its noise immunity and fast switching times make it suitable for applications in the telecommunications industry, as well.
The specific data is subject to PDF, and the above content is for reference
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