IXGQ200N30PB Allicdata Electronics

IXGQ200N30PB Discrete Semiconductor Products

Allicdata Part #:

IXGQ200N30PB-ND

Manufacturer Part#:

IXGQ200N30PB

Price: $ 4.67
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 300V 400A TO3P
More Detail: IGBT 300V 400A Through Hole TO-3P
DataSheet: IXGQ200N30PB datasheetIXGQ200N30PB Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 4.67000
10 +: $ 4.52990
100 +: $ 4.43650
1000 +: $ 4.34310
10000 +: $ 4.20300
Stock 1000Can Ship Immediately
$ 4.67
Specifications
Vce(on) (Max) @ Vge, Ic: --
Supplier Device Package: TO-3P
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: --
Test Condition: --
Td (on/off) @ 25°C: --
Input Type: Standard
Switching Energy: --
Series: --
Current - Collector (Ic) (Max): 400A
Voltage - Collector Emitter Breakdown (Max): 300V
IGBT Type: --
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBT or Insulated Gate Bipolar Transistor is an important component in the electronic market. This active electronic device is designed to combine the qualities of both bipolar transistors and MOSFETs. Therefore, IGBTs have lower conduction and switching losses than the other two components. The IXGQ200N30PB is a single IGBT that combines the functions of both PMOS and NMOS transistors.

The IXGQ200N30PB is an optically isolated, low-voltage, high-output, medium-power IGBT. It is developed by IXYS Corporation, a leading provider of power semiconductor solutions. IXGQ200N30PB is designed specifically for use in motor control applications, but it can also be used in various electrical systems such as solar cells, computer control systems, industrial controls, and household appliances. It is available in a variety of packages including QFN, DPAK, through-hole 5pin, and DIP.

The IXGQ200N30PB offers several benefits to the user. Firstly, it has a low gate charge and a low collector to emitter saturation voltage so it can be used for high efficiency switching applications. Secondly, the IXGQ200N30PB is optically isolated, meaning that the gate and collector are electrically separated. This prevents any false triggering due to electrical noise or interference and also improves the thermal management of the component.

The primary application fields of the IXGQ200N30PB IGBT are DC motor control and on/off power switching applications. In DC motor control applications, it is used to improve the speed control of electric motors. It is also used in applications where high voltage and high current are necessary to achieve the required output. In on/off power switching applications, the IXGQ200N30PB can be used to switch on or off the power supply to a circuit or device. In this application, the IGBT activates and deactivates the circuit or device based on the input signal.

The working principle of the IXGQ200N30PB IGBT is quite simple. The transistor consists of two MOSFETs: an NMOS and a PMOS. When the input signal is applied, the NMOS transistor turns on, supplying current to the PMOS transistor. The PMOS then takes the control of the IGBT. When the PMOS is turned on, the output is activated, and when the PMOS is turned off, the output is deactivated. By alternating the input signal, the IGBT is able to switch between the on and off states without requiring any other components.

In conclusion, the IXGQ200N30PB IGBT is an optimized device used for DC motor control and switching applications. It offers superior power performance, low conduction and switching losses, and excellent thermal management. Its optically isolated design makes it well suited for applications involving high voltages and currents. This IGBT is an ideal choice for device and power circuit designers, especially those working in the motor control industry.

The specific data is subject to PDF, and the above content is for reference

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