IXGR12N60C Allicdata Electronics
Allicdata Part #:

IXGR12N60C-ND

Manufacturer Part#:

IXGR12N60C

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: IXYS
Short Description: IGBT 600V 15A 55W ISOPLUS247
More Detail: IGBT 600V 15A 55W Through Hole ISOPLUS247™
DataSheet: IXGR12N60C datasheetIXGR12N60C Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 90µJ (off)
Base Part Number: IXG*12N60
Supplier Device Package: ISOPLUS247™
Package / Case: ISOPLUS247™
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Test Condition: 480V, 12A, 18 Ohm, 15V
Td (on/off) @ 25°C: 20ns/60ns
Gate Charge: 32nC
Input Type: Standard
Series: HiPerFAST™
Power - Max: 55W
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Current - Collector Pulsed (Icm): 48A
Current - Collector (Ic) (Max): 15A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: --
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The IXGR12N60C is a member of a well-known family of IGBTs. This type of transistor is part of a group known as Single Gate IGBTs, and as such it offers very specific properties based on the layout of its transistor structuring and its specific technology process. It is widely popular in a wide spectrum of industries and applications, from electric motors and power supplies to LED lighting, automation and robotics.

The IXGR12N60C is a three-terminal device that combines the best features of both BJTs and MOSFETs. It is a hybrid between an insulated gate bipolar transistor (IGBT) and a metal-oxide-semiconductor field-effect transistor (MOSFET) with the structure and operation of both being integrated into a single device. The combination of features from both types of transistor make it a powerful tool for many applications. This particular device is specifically designed for use in switching applications where high current and low gate drive power is needed. It is implemented in a very robust housing, and is widely popular due to its high switching speed, low switching losses and low on-state conduction losses.

The heart of the IXGR12N60C is its main switching element. The device consists of a p-type substrate to which a gate electrode is connected. The substrate is between an n-type emitter and collector region. This layout allows for the gate voltage to control the bipolar action between the collector and emitter region. When the gate voltage is low, the IGBT acts like an open switch. When the voltage is increased, the IGBT acts like a closed switch and causes a current to flow between the collector and emitter. This is the principle on which the three terminal IXGR12N60C device operates.

One of the most common applications for the IXGR12N60C is in power systems, including power electronics, motor drives, and power supplies. Power systems often rely on high power and high precision, and the transistor’s low conduction losses and its high switching speed make it the perfect choice. Other applications include inverters, solid-state relays, audio amplifiers, and telecom systems. The IXGR12N60C is used in these systems as it is a reliable and cost-effective choice that offers unparalleled performance with low power consumption and high switching speed. It is also used as a part of motor control circuits, such as motor speed control and motor reversing.

In summary, the IXGR12N60C is a single-gate IGBT that is used in a variety of applications, from power systems and motor control to audio amplifiers and telecom systems. It offers excellent performance, with low power consumption and high switching speed, and is a cost-effective way to improve system performance. Its robust and reliable construction makes it a great choice where power efficiency is paramount.

The specific data is subject to PDF, and the above content is for reference

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