IXGR35N120D1

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IXGR35N120D1 Application Field and Working Principle

IXGR35N120D1 is one of the most popular Insulated Gate Bipolar Transistors (IGBTs) globally. It is largely used in various areas such as automotive, industrial, consumer electronics, general purpose and more. This type of IGBT is specified for use in applications away from mains power. IXGR35N120D1 is available in the standard TO-247AC output package.

The primary application field of this IGBT module is for Motor drives, DC/DC converters and Lighting, as it exhibits a superior combination of performance, power and current handling. This device is quite novel compared to other IGBT modules and features reduced switching loss and improved power density. It also offers fast switching capability, while increasing power density, energy efficiency and reliability.

Product Characteristics

The IXGR35N120D1 is a 1200V IGBT module that has a built-in NTC thermistor and is bundled with advanced features such as quiet operability, excellent thermal properties, low turn-on losses, low audible noise levels and high EMI performance. In addition, this device also has improved thermal resistance and superior current sharing for parallel operation.

The nominal current rating of this IGBT is 35A and it has a collector-emitter breakdown voltage of 1200V. It also has a gate-emitter voltage of +/- 15V and a short circuit rating of 4A.

Working Principle

IGBTs operate by combining the advantageous functions of field effect transistors (FETs) and bipolar junction transistors (BJTs). In theory, this combination creates ideal devices that should exhibit the best characteristics of both types of devices: high speed switching, high voltage and current rating, low gate drive power, low-on resistance and superior thermal characteristics. Like any other switch, IGBTs are used to open and close electrical circuits. However, unlike BJT, the IGBTs do not require a high current source to activate the cutoff process. When the gate voltage is applied and exceeds a certain voltage, the drain current passes through the IGBT. In this way, the IXGR35N120D1 IGBT maintains a unique combination of low turn-on losses and fast switching capability.

Conclusion

The IXGR35N120D1 IGBT module provides superior performance and power compared to conventional modules and is designed for use in a variety of applications located away from mains power. It features a nominal current rating of 35A and a collector-emitter breakdown voltage of 1200V. It also features reduced switching loss, improved power density, fast switching capability and high EMI performance. Finally, this IGBT operates by combining the advantageous functions of field effect transistors (FETs) and bipolar junction transistors (BJTs).

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